Samsung Electronics Co., Ltd.

Sungkyunkwan University

Dong-mok Whang

Eun-Kyung Lee

Byoung-lyong Choi

Jae-hyun Lee

Byoung-Iyong Choi

Byung-Sung Kim

Eun-kyung Lee

Sun-hwak Woo

Yoon-sun Choi

Seung-nam Cha

Moon-Gyu Lee

Su-Mi Lee

Won-Jae Joo

Jong-woon Lee

Byoung-Lyong Choi

Jin-Hwan Park

Sun-Hwak Woo

A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.

Graphene structure and method of manufacturing the same

According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Wire structure and semiconductor device having the same, and method of manufacturing the wire structure

A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.

Graphene structure and method of fabricating the same

Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Porous nanostructure and method of manufacturing the same

A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device

A composite structure of graphene and polymer and a method of manufacturing the complex. The composite structure of graphene and polymer includes: at least one polymer structure having a three-dimensional shape; and a graphene layer formed on the at least one polymer structure.

Composite structure of graphene and polymer and method of manufacturing the same

A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.

Method of manufacturing graphene by using germanium layer

A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition ('CVD') method.

Method of synthesizing nanowires

A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.

Composite structure and method of manufacturing the same

Provided are a method of preparing a nanowire grid polarizer, and a nanowire grid polarizer prepared using the same. The method includes: mixing a surfactant and a silica precursor to prepare a mesoporous film composition; coating the mesoporous film composition on a substrate; aging the coated product to form a silica template composite; removing the surfactant inside the silica template composite to prepare a mesoporous material having channels; and filling the channels of the mesoporous material with metal. The method is suitable for the formation of a nanowire having a stable structure, mass production, and large-area production.

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Dong-mok Whang