Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Dong Min Lee

Hyun Eok Shin

Su Kyoung Yang

Chang Oh Jeong

Chan Woo Yang

Sang Won Shin

Joon Yong Park

Hyun Ah Sung

Sang Gab Kim

Ju Hyun Lee

Sang Woo Sohn

Joon Geol Lee

Kyeong Su Ko

Do Keun Song

Hyune Ok Shin

Shin Il Choi

Hyun Min Cho

Sung H Hong

Tae Wook Kang

Sang Wook Lee

Kyung Tae Chae

Byeong-Beom Kim

Yun Jong Yeo

Gyung Min Baek

Jong Hyun Choung

Kyung Seop Kim

Joon Woo Bae

Dong Hee Lee

Dae Won Choi

Hong Ro Lee

Gwang Min Cha

Chang Mo Park

Beung Hwa Jeong

Young Rok Kim

Hong Long Ning

Sung Joo Kwon

Yo Seoph Ko

Kyu Soon Park

Provided is a display device comprising a substrate including a first sub-display area and a main display area surrounding the first sub-display area, a first transistor disposed on the main display area without overlapping the first sub-display area, a via insulating layer to cover the first transistor, a first light emitting element to overlap the main display area without overlapping the first sub-display area, a second light emitting element to overlap the first sub-display area without overlapping the main display area, and a transparent oxide layer to overlap the first sub-display area without overlapping the main display area, wherein the transparent oxide layer includes a conductive portion and a non-conductive portion, the first light emitting element is disposed to overlap the first transistor while being connected thereto, and the second light emitting element is connected to the conductive portion of the transparent oxide layer.

Display device and method of manufacturing the same

A display device includes a first substrate including a display area and a pad area, which is on one side of the display area, a plurality of conductive layers each including a plurality of wires and conductive patterns, which are in the display area and the pad area, on the first substrate, a via layer on the plurality of conductive layers, a first electrode and a second electrode on the via layer, in the display area, to be spaced apart from each other, a first insulating layer on the first electrode and the second electrode, a plurality of light-emitting elements on the first electrode, the second electrode, and on the first insulating layer, and a first connecting electrode on the first electrode and in contact with the plurality of light-emitting elements, and a second connecting electrode on the second electrode and in contact with the plurality of light-emitting elements, wherein at least one of the plurality of conductive layers includes a metal layer, which includes a copper-silver (CuAg) alloy and has a crystal grain size of 140 nm or less.

Wiring substrate and display device including the same

Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Display device

Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.

Display device including Ga doped indium tin oxide (ITO) based emission layer and manufacturing method thereof

A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

Conductive pattern having first and second capping layers and display device including the same

Provided is a display device including a display panel configured to include a plurality of pixels positioned on a first substrate and a plurality of scan lines positioned along a first direction; and a plurality of shift registers configured to receive a plurality of clock signals and a start signal, to generate a plurality of scan signals, and to transfer the scan signals to the scan lines, wherein a first shift register among the shift registers is positioned on a second substrate, and is connected to an adjacent second shift register positioned on the first substrate among the shift registers and a corresponding scan line through a contact hole formed in the second substrate.

Display apparatus and shift resister repairing method

Display device and manufacturing method thereof

A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 &#x212b; or more to 144 &#x212b; or less.

Thin film transistor substrate

A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

Conductive pattern with tapered angle, display device including the same, and method of manufacturing conductive pattern

A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 &#x212b; or more to 144 &#x212b; or less.

A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

A transistor is positioned on a substrate. The transistor includes a semiconductor layer. A buffer layer is positioned between the substrate and the semiconductor layer of the transistor, including an insulating material. A bottom layer is positioned between the substrate and the buffer layer. The bottom layer and the semiconductor layer overlap each other. The bottom layer includes a first layer, a second layer, and a third layer that are stacked on each other in a direction away from the substrate.

Transistor array panel

A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiN), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).

Metal line and thin film transistor

A display device includes a substrate and a wire grid polarizer disposed on the substrate. The wire grid polarizer includes a first wire grid layer, a first middle layer, and a second wire grid layer. The first wire grid layer includes a plurality of first wire grid lines separated from each other. The first middle layer is disposed on the first wire grid layer. The first middle layer includes a first portion having a first middle layer thickness and a second portion having a second middle layer thickness thinner than the first middle layer thickness. The second middle layer thickness is thinner than a thickness of each first wire grid line. The second wire grid layer is disposed on the first middle layer and includes a plurality of second wire grid lines separated from each other. The second wire grid lines overlap the second portion of the first middle layer.

Display device including wire grid polarizer and manufacturing method thereof

Growing community of inventors

Anyang-si, South Korea

Dong Min Lee