Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Electronics and Telecommunications Research Institute

Pusan National University

Dong-Min Kim

Jeong-Woo Park

Kyoung Back Lee

Dong-Woo Kim

Ki-Hyun Kim

Jin-Ho Ju

Song-Ho Yoon

Ki-Hyun Cho

Jin Hwan Choi

Jeong-Min Park

Hoon Ki Lee

Hi-Kuk Lee

Sung-Hyun Kim

Woo-Seok Jeon

Hoon Jong Kang

Ji-Hyun Kim

Sang-Hyun Park

Kwang-il Park

Jung-Ho Lee

Seung-Jun Bae

Young-Soo Sohn

Jong-han Lim

Min Hyuck Kang

Jun Su Chun

Sang-Min Lee

Seok-Jae Han

Hong-Sun Hwang

Bong-Gee Song

Tae-Gyun Kim

Jae-Sung Kim

Sang-Min Bae

Chan-Kyung Kim

Byung-Uk Kim

Jooyoung Hwang

Jung-In Park

Jung-Soo Lee

Seong-je Cho

Shuichi Shimokawa

Kwang-bok Kim

Dong-woo Kim

Sang-Hyun Yun

Chul-ho Cho

Bong-Yeon Kim

Doo-Hee Jung

Hyun-Joo Lee

Seok-chan Lee

Jin-Woo Roh

Jae-bum Lee

Sung-Kyun Park

Takafumi Usui

Jaegyu Lee

In-Tae Kang

Kwi-Sung Yoo

Songho Yoon

Hyunsoo Cho

Youngmoon Kim

Eun Jeagal

Sang-Kyu Kim

Bo-Rham Lee

Seung-Ki Kim

Kyung-Chul Yoo

Wook-Han Jeong

Kyung-Hoon Lee

Yun-Ju Kwon

Chul-Won Park

Dong-Woo Kang

Jeong-Won Kim

Wook Han Jeong

Dae-gab Gweon

Byung-il Ahn

Suk-won Lee

Ki-Baek Kim

Jin-Hwan Choi

Sangyoon Oh

Jong-Han Lim

Seung-Kab Ryu

Ho-Seok Seol

Ki-Sun Kim

Jun-Hyuk Woo

Byungjune Song

Shin-Ho Kim

Jeong Hur

Sang-Don Jang

Kwang-Woo Park

Younwon Park

Uijung Kim

Yoon-Bo Shim

Jung-Hwa Bae

Youn-joo Song

Dong-Seok Baek

Seung-Hyun Lim

Minseok Yoon

Soung-Chang Ku

Jong-rak Sohn

Woo-seok Choi

Saehoon Ju

Huirae Cho

Ju-seok Lee

Jae-Yun Sim

Deuk-Soo Shin

A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.

Storage device, memory system comprising the same, and operation method thereof

A method of operating a storage device includes receiving, at the storage device, a meta information transfer command based on a data read request. The meta information transfer command is received from a host device. The method further includes receiving, at the storage device, a data read command corresponding to the data read request and the meta information transfer command. The data read command is received from the host device. The method further includes receiving, at the storage device, a plurality of meta data corresponding to the data read request and the meta information transfer command. The plurality of meta data is received from the host device. The method further includes performing a data read operation, at the storage device, based on the data read command and the plurality of meta data.

Method of operating storage device, storage device performing the same and method of operating storage system using the same

Disclosed is a biosensor. The biosensor comprises: an electrode; and a polymer structure disposed on the electrode and formed of poly-5,2':5′,2″-terthiophene-3′-carboxylic acid (pTTCA), wherein an enzyme is present in a state of covalently binding with pTTCA inside the polymer structure.

Biosensor and manufacturing method therefor

A storage device that includes a nonvolatile memory device is described. The storage device includes areas and a controller. The controller receives a write command and data from an external host device. The controller then preferentially writes the data in an area associated with a turbo write based on a turbo write policy, or in an area not associated with a turbo write based on a normal write policy. The controller also receives a move command from the external host device and moves data stored in the area to a different area based on the move command.

Storage device and method for accelerating storage device write and read speed using a turbo-write buffer

An operation method of a UFS device including: determining, by a host, area information for write data, wherein in a turbo read the write data is stored in a non-pinned or pinned buffer area and in a normal read the write data is stored in a user storage; transferring, by the host, a first command UFS protocol information unit (UPIU); transferring, by the UFS device, an RTT UPIU to the host, transferring, by the host, a DATA OUT UPIU to the UFS device; mapping, by UFS device, a first logical block address with a physical address of an area corresponding to the area information; transferring, by the host, a second command UPIU; and performing the turbo read on the area to read data corresponding to the first logical block address when the area corresponding to the area information is the pinned or non-pinned turbo write buffer.

Storage device including a turbo write buffer divided into a non-pinned buffer area and a pinned buffer area, an operation method of a storage system including the storage device in which data of the non-pinned and pinned buffer areas are flushed differently, and a host device controlling the storage device

A memory system includes a host device including a host controller, and a memory device including a device controller and a non-volatile storage including a purge region and a memory region. The device controller communicates purge information associated with the purge region and including size information of the purge region. The host controller communicates a request for generating a first partition for a first logical unit in the memory region, and communicates a request for generating a second partition for a second logical unit in the purge region in response to the size information of the purge region.

Method of operating memory device and host device, and memory system including partitioning purge region responsive to purge information

Provided is a storage device which communicates with a host device and configured to set a secure mode of a plurality of commands different in kind. An operating method of the storage device includes receiving a secure request indicating a protection of a first command and a protection of a second command of the plurality of commands, from the host device; setting a secure mode of the first and second commands, based on the secure request; receiving a first request indicating a request to execute the first command, from the host device; outputting a first response indicating failure of the first command to the host device, based on the first request; receiving a second request indicating a request to execute the second command, from the host device; and outputting a second response indicating failure of the second command to the host device, based on the second request.

Operating method of storage device setting secure mode of command, and operating method of storage system including the storage device

A storage device includes a nonvolatile memory device that includes a first region including memory cells configured to store n-bit data and a second region including memory cells configured to store m-bit data and a memory controller, where n and m are natural numbers and n is less than m. The first region includes a first area and a second area, and the second region includes a third area. The memory controller is configured to perform one of a turbo write operation on the first area or the second area and a normal write operation on the third area, and configured to perform one of a turbo read operation on the first area or the second area and a normal read operation on the third area.

Memory device including plurality of buffer areas for supporting fast write and fast read and storage device including the same

A storage device includes a nonvolatile memory device that includes a first area, a second area, and a third area, and a controller that receives a write command and first data from a host device, preferentially writes the first data in the first area or the second area rather than the third area when the first data is associated with a turbo write, and writes the first data in the first area, the second area, or the third area when the first data is associated with a normal write. The controller moves second data between the first area, the second area, and the third area based on the policy received from the host device.

Storage device and operating method thereof

Storage device and method for accelerating storage device write and read speed

A storage device including a nonvolatile memory device is described. The storage device includes a controller that receives a write command and data from an external host device. The controller preferentially writes the data in an area based on a normal write policy when the data is associated with a normal write, and in an area based on a turbo write policy when the data is associated with a turbo write. The controller may also receive a read command, to read data from an area based on the read command, and output the data to the external host device. The controller may also move the data in response to move information of the read command when the read command is received together with move information.

Storage device for accelerating write speed and read speed

Provided is a semiconductor device and a semiconductor system. A semiconductor device can include a command priority policy manager circuit which generates command priority policy information including a command priority compliance policy for a command directed to a device. A host interface circuit can be coupled to the command priority policy manager circuit to receive the command priority policy information from the command priority policy manager circuit, where the host interface circuit operable to transmit the command priority policy information via an electrical interface to the device.

Semiconductor devices including command priority policy management and related systems

A storage device including: a nonvolatile memory device including a first, second and third area; and a controller to receive a first write command including a first logical block address from a host, to receive first data corresponding to the first logical block address in response to the first write command, and store the first data in the nonvolatile memory device, when the first write command includes area information, the controller stores the first data in the first area or the second area based on the area information, when the first write command does not include the area information, the controller stores the first data in the third area, each of the first area and the second area includes memory cells each storing 'n' bits (n being a positive integer), and the third area includes memory cells each storing 'm' bits (m being a positive integer greater than n).

Storage device, an operation method of a storage system including the storage device in which data stored in apinned buffer area and a non-pinned buffer area is flushed according to a flush request/policy, and a host device controlling the storage device

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Hwaseong-si, South Korea

Dong-Min Kim