Samsung Electronics Co., Ltd.

Dong-Kyum Kim

Ki-Hyun Hwang

Jin-Gyun Kim

Sang-Hoon Lee

Hyun Namkoong

Jung-Hwan Kim

Ji-Hoon Choi

Hun-hyeong Lim

Jung Geun Jee

Su-Jin Shin

Han-Vit Yang

Koong-Hyun Nam

Ji-Man Yoo

Eun-Young Lee

Jung-Ho Kim

Jung-Geun Jee

Sung-Hae Lee

Eun-Yeoung Choi

Hyun-Yong Go

A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.

Semiconductor devices and methods of manufacturing the same

A semiconductor device is provided. The semiconductor includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked in a first direction on a substrate. The plurality of interlayer insulating layers and the plurality of gate electrodes constitute a side surface extended in the first direction. A gate dielectric layer is disposed on the side surface. A channel pattern is disposed on the gate dielectric layer. The gate dielectric layer includes a protective pattern, a charge trap layer, and a tunneling layer. The protective pattern includes a portion disposed on a corresponding gate electrode of the plurality of gate electrodes. The charge trap layer is disposed on the protective pattern. The tunneling layer is disposed between the charge trap layer and the channel pattern. The protective pattern is denser than the charge trap layer.

Semiconductor device and method of fabricating the same

Semiconductor devices

In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Methods of manufacturing semiconductor devices including an oxide layer

A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.

Non-volatile memory device having a vertical structure and method of fabricating the same

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Suwon-si, South Korea

Dong-Kyum Kim