Samsung Electronics Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Display Co., Ltd.

Dong-kyu Lee

Se-Chung Oh

Jung-dal Choi

Ju-hyun Kim

Jung-hwan Park

Kyung-il Hong

Jung-min Lee

Sung-Jin Kim

Mu-Hyun Kim

Sang-Su Kim

Joo-hwan Noh

Ji-won Moon

Jae-Hwan Lee

Eun-ae Chung

Seung-Wook Chang

Gab-Jin Nam

Toshiro Nakanishi

Tae-yong Kwon

Guangfan Jiao

Yu-bin Kim

A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Variable resistance memory device

In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10Torr.

Method of manufacturing a variable resistance memory device

A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed.

Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device

A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.

Semiconductor device having strain-relaxed buffer layer and method of manufacturing the same

An electrophotographic image forming apparatus including first and second developing devices to develop electrostatic latent images formed on first and second photosensitive bodies, each of the first and second developing devices comprise a first toner containing unit to contain a toner, the second developing device further including a second toner containing unit that is connected to the first toner containing unit by a connecting unit.

Developing device and electrophotographic image forming apparatus including the same

An organic light emitting display device includes a substrate, a display unit that is formed on the substrate, and includes a plurality of organic light emitting regions that emit light, a sealing member disposed above the display unit, and one or more light absorption pattern units formed on a plurality of non-light emitting regions of the display unit.

Organic light emitting display device including light absorption pattern unit

A flat panel display apparatus including a display unit, a cover covering the display unit, and a film disposed on the cover. The film has one or more protrusions, each having a reflective first surface and a transparent second surface. The first surface can include a coating. The second surface transmits light from the display unit, at a first angle, and the second surface reflects external light at a second angle.

Flat panel display apparatus

A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT includes a substrate, a protection layer disposed on the substrate, a buffer layer disposed on the protection layer, a semiconductor layer disposed on the buffer layer, a gate electrode disposed on the semiconductor layer, a gate insulating layer to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and connected to the semiconductor layer. The protection layer is formed of an amine-containing clay. The OLED includes the TFT, an insulating layer disposed on the TFT, a first electrode connected to the drain electrode of the TFT, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer.

Growing community of inventors

Suwon-si, South Korea

Dong-kyu Lee