Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Korea University Research and Business Foundation

Dong-Kyu Lee

Sung-Min Kim

Ji-su Kang

Dong-Ho Cha

Jae-Hun Kim

Chul-Ki Kim

Taik-Jin Lee

Young-Min Jhon

Min-Ah Seo

Young-chae Kim

Ja-Min Goo

Joo-Hwan Noh

Hyung-Seok Chang

Ki-Hyun Yoo

Seok Pil Lee

Jung-Hoon Kim

Si-Young Choi

Yu-Gyun Shin

Kyung-Jin Lee

Kyung-Hee Lee

Dong-Chan Kim

Ji-Hyun Park

Sung-Jin Ann

Hyung-ho Hwangbo

Jin-Hong Kim

Jin-Hong Jeong

Jun-Seok Lee

Tai-Su Park

Jong-Ryeol Yoo

Seong-Hoon Jeong

Sung-Kyun Bai

Jong-Hwa Park

Ji-Won Moon

Jong-Hoon Kang

Seung-Han Yoo

Ju-Yeong Lee

Byong Guk Park

Seung-Kyoon Shin

Jeong-Do Ryu

Hyung-Woo Kim

Seung-Hyuk Yu

Yong-Nam Ahn

Bo-Ram Namgoong

Jung-Sup Oh

Jung-Soo An

Gun-Joong Lee

Jung-Geun Park

Ung-Sik Kim

A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer. The antiferromagnetic layer (or ferrimagnetic layer) is a thin film made of a material magnetized in perpendicular or in-plane direction to a layer surface, the ferromagnetic layer is in-plane magnetized to a layer surface of the ferromagnetic layer, and an in-plane current injected into the ferromagnetic layer and the non-magnetic conductive layer through the first and second electrodes provides a spin current including a spin in a thickness direction of the thin film transferred to the antiferromagnetic layer (or ferrimagnetic layer), thereby causing magnetization precessional motion of a sub-lattice of the antiferromagnetic layer (or ferrimagnetic layer).

Low-power terahertz magnetic nano-oscillating device

An unmanned aerial vehicle (UAV) and a method for controlling the flight of the UAV are provided. The UAV provides a motion feedback corresponding to a user command received and a method for controlling the flight of the UAV. The UAV further provides a magnitude of motion feedback that is varied depending on the distance and/or direction between the user and the UAV and a method for controlling the flight of the UAV.

Unmanned aerial vehicle and method for controlling flight of the same

Disclosed herein are a method and a device for sensing sugars, using terahertz electromagnetic waves. By the method, even a trace amount of sugars in a liquid state can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, sugars even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto sugars through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of a sugar of interest.

Method for sensitively and selectively sensing sugars using terahertz electromagnetic waves and device used therefor

Disclosed is an electronic device including a memory; and a processor, wherein the memory stores instructions which when executed, cause the processor to load a virtual server in the memory when a connection of a camera to the electronic device is detected, receive at least one image from the camera, control processing of the at least one image through the virtual server, and provide the at least one image processed through the virtual server to an application corresponding to the virtual server.

Electronic device connected to camera and method of controlling same

Disclosed herein are a method and device for sensing pesticide residues, using terahertz electromagnetic waves. By the method, even a trace amount of pesticide residues on objects such as fruits can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, pesticide residues even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto pesticide residues through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of a pesticide residue of interest.

Method for sening residues using terahertz electromagnetic waves with high sensitivity and device used therefor

Disclosed herein are a method and device for sensing avian influenza viruses, using terahertz electromagnetic waves. By the method, even a trace amount of avian influenza viruses in a liquid state can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, avian influenza viruses even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto avian influenza viruses through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of an avian influenza virus of interest.

Method for sensitively and selectively sensing avian influenza virus using terahertz electromagnetic waves and device used therefor

Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

Semiconductor device and method for fabricating the same

A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.

Methods of forming semiconductor devices using hard mask layers

Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern.

Manufacturing method of a semiconductor device

In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.

Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices

Toner cartridge for a printer

Disclosed is a method for reselling content. The method comprises receiving sale information for particular content to be resold from a seller terminal in reply to a request by a seller who wishes to resell the content over a communication network, and registering the corresponding content as secondhand content; providing the corresponding secondhand content to a buyer terminal in reply to a request by a buyer who wishes to buy the secondhand content, and transmitting sale information for the secondhand content to the seller terminal; and paying a sale price for the secondhand content to the seller after charging a fee for the secondhand content to the buyer.

Method for reselling content

Lamp for an imaging device

Growing community of inventors

Seoul, South Korea

Dong-Kyu Lee