Hanwha Techwin Co., Ltd.

Samsung Techwin Co., Ltd.

Sungkyunkwan University

Hanwha Aerospace Co., Ltd.

Nps Corporation

Versarien Plc

Dong-kwan Won

Jae-chul Ryu

Jong-Hyuk Yoon

Chang-soo Jang

Young-il Song

Hyoung-ho Roh

Duk-hwa Na

Won-Sik Nam

Se-hoon Cho

Byung-hee Hong

Na-young Kim

Doc-Hwa Na

Seung-Min Cho

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Graphene synthesis chamber and method of synthesizing graphene by using the same

A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.

Multi-layered graphene sheet and method of fabricating the same

Provided are method and apparatus for transferring graphene. The graphene transferring method includes: a graphene synthesizing operation comprising forming at least one layer of graphene on at least one surface of a catalyst metal film; a substrate film attaching operation comprising contacting an adhesive first surface of the substrate film to the at least one layer of graphene and compressing the catalyst metal film and the substrate film by using a first roller; and a substrate film separating operation comprising separating the substrate film from the catalyst metal film such that the at least one layer of graphene is separated from the catalyst metal film together with the substrate film.

Method and apparatus for transferring graphene

Provided is a method of post treating graphene including providing graphene on a metal thin film, providing a carrier on the graphene, hardening the carrier, and removing the metal thin film from the graphene.

Method of post treating graphene and method of manufacturing graphene using the same

An apparatus and method for inspecting a graphene board. The graphene board inspecting apparatus for inspecting a graphene board on which at least one graphene layer is formed includes: a light processing unit which emits at least one light on the graphene board, receives the at least one light penetrating the graphene board and converts the received at least one light to an output signal; a transmittance detecting unit which receives the output signal from the light processing unit to inspect a transmittance of the at least one light penetrating the graphene board; and a determination unit which is connected to the transmittance detecting unit and receives the detected transmittance to determine a state of the graphene board by analyzing the detected transmittance.

Apparatus and method for inspecting graphene board

A method of transferring graphene, the method including: preparing a graphene forming structure including a base member, an oxide layer that is hydrophilic and is formed on the base member, a metal catalyst layer that is hydrophobic and is formed on the oxide layer, and graphene that is formed on the metal catalyst layer; attaching the graphene forming structure on a surface of a first carrier; separating the oxide layer from the metal catalyst layer by applying steam to the graphene forming structure; and removing the metal catalyst layer.

Method of transferring graphene

Provided is a method of manufacturing a printed circuit board. In an embodiment, the method includes forming a prepreg layer via a reel method, forming a conductive film for forming a circuit pattern on at least one surface of the prepreg layer; and forming a predetermined circuit pattern on the conductive film. In an embodiment, the prepreg layer has a thickness of at most about 0.15 mm and contains a fiber material and a resin material. In an embodiment, the content of the resin material in the prepreg layer is about 70% or less by volume. In an embodiment, the prepreg layer is composed of at least one prepreg layer.

Printed circuit board and method of manufacturing the same

A parent or master substrate for a semiconductor package is provided, which can provide a plurality of unit substrates by cutting into pieces for producing a semiconductor device. The parent substrate includes an insulation layer, conductor patterns formed on first and second surfaces of the insulation layer, and PSR (photo solder resist) layers respectively formed on the first and second surfaces of the insulation layers and covering the conductor patterns. The parent substrate includes an upper part and a lower part divided by a reference surface which passes through the center of the insulation layer. When an equivalent thermal expansion coefficient &#x3b1;of the upper part is defined by the Equation of where &#x3b1;is respective thermal expansion coefficients of, Eis respective elastic moduli of, and vis respective volume ratios of first through ncomponents constituting the upper part (e.g., insulation layer, conductor patterns, and PSR layers of the upper part), and an equivalent thermal expansion coefficient &#x3b1;of the lower part is defined by the Equation of where &#x3b1;is respective thermal expansion coefficients of, Eis respective elastic moduli of, and vis respective volume ratios of first through mcomponents constituting the lower part (e.g., insulation layer, conductor patterns, and PSR layers of the lower part), a equivalent thermal expansion ratio (&#x3b1;/&#x3b1;) of &#x3b1;to &#x3b1;is selected to be within a range of 0.975 through 1.165.

Growing community of inventors

Changwon, South Korea

Dong-kwan Won