Samsung Electronics Co., Ltd.

Dong Kwan Baek

Su Hwan Kim

Sang Yeol Kang

Kyoo Ho Jung

Won Sik Choi

Yu Kyung Shin

A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).

Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same

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Seoul, South Korea

Dong Kwan Baek