Siltron, Inc.

Lg Siltron Incorporated

Sk Siltron Co., Ltd.

Dong Kun Lee

Yong Jin Kim

Doo Soo Kim

Ho Jun Lee

Kye Jin Lee

Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Semiconductor device, light emitting device and method of manufacturing same

The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

Method of manufacturing gallium nitride semiconductor

Growing community of inventors

Gumi-si, South Korea

Dong Kun Lee