Samsung Electronics Co., Ltd.

Dong Kuk Lee

Nam Goo Cha

Hyung Kun Kim

Jin Bock Lee

Yong Min Kwon

Seung Hwan Lee

Dong Hoon Lee

Dae Young Lee

Mi Hyun Kim

Je Won Kim

Sung Hyun Sim

Dong Hyun Cho

Geon-Wook Yoo

Hye Seok Noh

Geon Wook Yoo

Sung Jin Ahn

Geun Woo Ko

Min Wook Choi

Dong Kyun Yim

Woo Seok Jang

Ki Won Park

Dae Yeop Han

Moon Sub Kim

A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.

Light emitting diode apparatus

A light emitting device package and a method of manufacturing the light emitting device package are provided. The light emitting package includes a light emitting stack including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer sequentially stacked, and having a first surface provided by the first conductivity-type semiconductor layer and a second surface provided by the second conductivity-type semiconductor layer and opposing the first surface; a first electrode structure disposed on a portion of the first surface and connected to the first conductivity-type semiconductor layer; a sealing portion disposed adjacent to the light emitting stack; an insulating layer disposed between the light emitting stack and the sealing portion; and a first metal pad disposed on the second surface and passing through the insulating layer at a side of the light emitting stack to connect to the first electrode structure.

Light emitting device package

A semiconductor light emitting device package includes a light emitting structure having a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first surface, and a second surface, a first electrode and a second electrode disposed on the second surface of the light emitting structure; an insulating layer, a first metal pad and a second metal pad disposed on the insulating layer, and each having a surface with a first fine uneven pattern so as to have a first surface roughness, a first bonding pad and a second bonding pad disposed on the first metal pad and the second metal pad, respectively, and each having a surface with a second fine uneven pattern so as to have a second surface roughness, and an encapsulant encapsulating the first bonding pad, the second bonding pad, the first metal pad, and the second metal pad.

Semiconductor light emitting device package

A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

Nanostructure semiconductor light emitting device

There is provided a semiconductor light emitting deviceincluding a substructureincluding at least one light emitting region Rincluding a plurality of three-dimensional (3-D) light emitting nanostructuresand at least one electrode region R, Rincluding a plurality of locations CPA,A,B,A,B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructuresand the plurality of locations CPA,A,B,A,B are identical.

Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting device package

A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

Growing community of inventors

Suwon-si, South Korea

Dong Kuk Lee