Samsung Electronics Co., Ltd.

Dong-kil Yun

Chan-Ho Kim

Pan-Suk Kwak

Hong-soo Jeon

Chanho Kim

Pansuk Kwak

Hongsoo Jeon

A non-volatile memory device may include a first semiconductor layer including a peripheral region, the peripheral region including one or more peripheral transistors on a lower substrate. The non-volatile memory device may further include a second semiconductor layer on the peripheral region, the second semiconductor layer including an upper substrate, the second semiconductor layer further including a memory cell array on the upper substrate. The upper substrate may include a first upper substrate on the first semiconductor layer, a first layer on the first upper substrate, and a second upper substrate on the first layer.

Non-volatile memory devices and methods of fabricating the same

A semiconductor memory includes a first memory cell array in a first region of a substrate and a second memory cell array in a second region of the substrate. The first memory cell array includes cell strings, and each cell string includes non-volatile memory cells stacked in a direction perpendicular to the substrate. The second memory cell array includes volatile memory cells, and each volatile memory cell includes a select transistor and a capacitor. The capacitor includes at least one contact electrically connected with the select transistor and having a second height corresponding to a first height of each cell string, and at least one second contact supplied with a ground voltage, having a third height corresponding to the first height of each cell string, adjacent to the at least one first contact, and electrically disconnected with the at least one first contact.

Semiconductor memories and methods for manufacturing same

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Hwaseong-si, South Korea

Dong-kil Yun