Samsung Electronics Co., Ltd.

Seagate Technology Incorporated

Dong-Ki Min

Seung-bum Hong

Hong-sik Park

Ju-Hwan Jung

Tae-Chan Kim

Young-Gu Jin

Hyoung-soo Ko

Young-jun Song

Sung-dong Kim

Kyoung-lock Baeck

Joon-hyuk Im

Jee-Hong Lee

Jong-Min You

Seok-Jae Kang

Taek-Sun Kim

Ilia Ovsiannikov

Hee Joo Kang

Hoon-sang Oh

Eun-sik Kim

Jong-youp Shim

Yibing Michelle Wang

Yoon-Dong Park

Jin-Seung Sohn

Kyung-Ho Kim

Lilong Shi

Young-Il Kim

Chul-min Park

Jin-ho Lee

Byung-kyu Lee

Yoon Dong Park

Yun-Seok Choi

Hong-Sik Park

Yun-woo Nam

Hirosige Goto

Dae-young Jeon

Hyun-jung Shin

Sung-Dong Kim

In-Sang Song

Da-Hee Lee

Jong-up Jun

Yun-seok Kim

Jung-Hoon Jung

Chae-sung Kim

Yo-Hwan Noh

Dae-Kwan Kim

Seong-Won Jo

Hyoung-Soo Ko

Eun-Sik Kim

Hyun-Jong Jin

Gab-Soo Han

Won Ju Kim

Young-Tack Hong

Dong-Ha Shim

Seung-Bum Hong

Sun-Hee Park

An image signal processor includes a register and a disparity correction unit. The register stores disparity data obtained from a pattern image data that an image senor generates, and the image sensor includes a plurality of pixels, and each of the pixel includes at least a first photoelectric conversion element and a second photoelectric conversion element. The image sensor generates the pattern image data in response to a pattern image located at a first distance from the image sensor. The disparity correction unit corrects a disparity distortion of an image data based on the disparity data to generate a result image data, and the image senor generates the image data by capturing an object.

Image signal processor, image processing system and method of binning pixels in image sensor

Image signal processor, image processing system and method of binning pixels in an image sensor

A crosstalk processing module configured to process a crosstalk of an image signal includes a correction element generation unit, a storage, and a crosstalk correction check unit. The correction element generation unit receives the image signal and input information associated with at least a size of the image signal and generates seed values and correction parameters which are used to correct the crosstalk, based on the input information and a representative channel image signal obtained by separating the image signal with respect to color. The storage stores the seed values and the correction parameters. The crosstalk correction check unit receives the image signal, receives the seed values and the correction parameters from the storage, corrects the crosstalk, and outputs a final image signal and pass/fail information indicating a pass or fail of the correction of the crosstalk based on a plurality of reference values.

Crosstalk processing module, method of processing crosstalk and image processing system

A pixel array of an image sensor includes a substrate, a chromatic pixel including a first photodiode formed in the substrate and a color filter formed over the first photodiode, and an achromatic pixel including a second photodiode formed in the substrate, the second photodiode having a nano pillar pattern at a surface region of the substrate.

Pixel array of an image sensor and image sensor

An image sensor operates in a base mode according to a first sampling rate and a first pixel exposure time and includes a light condition detector that extracts illuminance information from a pixel signal received from pixels in a pixel array, and generates a low-illuminance information signal upon detecting that a value of the illuminance information falls within a first range, a sampling controller that changes the first sampling rate to a second sampling rate in response to the low-illuminance information signal, and an exposure time controller that changes the first pixel exposure time to a second pixel exposure time in response to the low-illuminance information signal.

Image sensor, image sensing method, and image photographing apparatus including image sensor

A sampling period control circuit according to an example embodiment of the inventive concepts is configured to derive a ramp voltage range of a row signal when analyzing a previous row signal in order to control a ramp voltage range of a next row signal.

Sampling period control circuit capable of controlling sampling period

Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.

CMOS image sensor based on thin-film on asic and operating method thereof

A motion sensing method is implemented by an image sensor, the image sensor including a first pixel and a second pixel. The method includes outputting a first pixel signal of the first pixel during a first integration time of a frame period, outputting a second pixel signal of the second pixel during a second integration time of the frame period, and generating comparison signals indicative of a sensed moving object by comparing the first pixel signal and the second pixel signal.

Image sensor, operation method thereof, and system including the same

An image sensor includes a light source that emits modulated light such as visible light, white light, or white light-emitting diode (LED) light to a target object, a plurality of pixels, and an image processing unit. The pixels include at least one pixel for outputting pixel signals according to light reflected by the target object. The image processing unit simultaneously generates a color image and a depth image from the pixel signals of the at least one pixel.

Image sensor for simultaneously obtaining color image and depth image, method of operating the image sensor, and image processing system including the image sensor

An image sensor includes a clock signal generator configured to generate and output at least first and second clock signals, a plurality of pixels configured to generate associated distance signals based on corresponding clock signals from among the at least first and second clock signals and light reflected by an object, and a distance information deciding unit configured to determine distance information with respect to the object by using the associated distance signals. At least one first pixel from among the plurality of pixels is configured to generate the associated distance signal based on at least the first clock signal, and at least one second pixel from among the plurality of pixels, which is adjacent to the at least one first pixel, is configured to generate the associated distance signal based on at least the second clock signal.

Image sensors for sensing object distance information based on clock signals

Provided are an electric field read/write apparatus and method, which reproduce information written in a recording medium by using an electric field read/write head including a channel. In the electric field read/write apparatus and method, an electric field generated from the recording medium is modulated by using a modulation signal, a variation in the modulated electric field is detected, and a voltage signal determined according to the detected variation is demodulated and information written in the recording medium is determined according to a result of the demodulation.

Electric field read/write apparatus and method

A multilevel one-time programmable memory device includes a plurality of memory cells, wherein each of the plurality of memory cells includes: a first electrode to which a first voltage is applied, a second electrode to which a second voltage is applied and a plurality of fuse lines performing a fusing operation according to a voltage difference between the first electrode and the second electrode. The plurality of fuse lines are connected to each other between the first electrode and the second electrode. In addition, at least one of the first electrode and the second electrode is formed such that the first electrode and the second electrode have different valid line lengths from each other therebetween so that the plurality of fuse lines have different resistances from each other.

Multilevel one-time programmable memory device

A micro actuator having separated stages and a data storage apparatus employing the same are provided. The micro actuator includes: a supporting unit; stages that are elastically supported by the supporting unit, each stage having a mounting surface where a target driven body is mounted thereon, and arranged adjacent to each other; levers which are disposed between the stages, each lever having two ends respectively connected to adjacent stages, and which apply force to the adjacent stages so that when one of the stages is moved, an adjacent stage is moved in an opposite direction to a moving direction of the moved stage; and driving units which respectively provide a driving force to the stages.

Micro actuator and data storage apparatus employing the same

A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus

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Seoul, South Korea

Dong-Ki Min