Samsung Electronics Co., Ltd.

Dong-Ju Ok

Kyoung-Lae Cho

Hye-Ry No

Sue-Jin Kim

A method of determining a read voltage of a memory device includes performing a plurality of read operations with respective different read voltages on a first group of storage regions of the memory device using a first error correction rate, wherein the plurality of read operations are performed to distinguish between a pair of adjacent logic states of memory cells in the first group of storage regions, detecting a read voltage level, among the different read voltages, at which a minimum number of erroneous bits is generated in the at least one read operation, and determining a read voltage for a second group of storage regions to which a second error correction rate is applied, based on the detected read voltage level, wherein the first error correction rate is higher than the second error correction rate.

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Busan, South Korea

Dong-Ju Ok