Samsung Electronics Co., Ltd.

Hyundai Motor Company

Samsung Electro-mechanics Co., Ltd.

Kia Corporation

Gwangju Institute of Science and Technology

Icepipe Corporation

Kia Motors Corporation

Samsung Led Co., Ltd.

Duck Yang Industry Co., Ltd.

Uminc. Corporation

Dong Ju Lee

Young Sun Kim

Sang Heon Han

Heon Ho Lee

Jong Hyun Lee

Je Won Kim

Yong Chun Kim

Jeong Tak Oh

Seong Ju Park

Hyun Wook Shim

Min Ki Kwon

Sung Tae Kim

Sung Jun Kim

Sang Jun Lee

Dong Joon Kim

Jung Hyun Park

Sung Chul Park

Jin Ho Hwang

Bang Won Oh

Dong Hui Kim

Sun Woon Kim

Dong Yul Lee

Jeong Wook Lee

Ji Woo Lee

Won Jin Choi

Ji Ah Kim

Jae Yong Lee

Sang Won Kang

Jin Young Lim

In Hee Shin

Jae Ho Han

Moon Hyuk Choi

Seong Suk Lee

Dug Young Kim

Se Young Lee

Joong Seo Kang

Ja Yeon Kim

Ji Seob Park

Joo Young Cho

Se Woong Ahn

Su Ho Jin

Ok Hyun Kim

Bong Sup Son

A removable fastening system includes a rail unit located in a vehicle, an electrode portion located at the inner side of the rail unit, a fixing unit having one end inserted to be fixed to the rail unit, and a mounting unit mounted at another end of the fixing unit, wherein the fixing unit is inserted into the rail unit and has a conductive portion rotated to be brought into contact with the electrode portion.

Removable fastening system

A method for determining a low voltage defect of a lithium secondary battery is provided. The method includes measuring a primary voltage of a lithium secondary battery whose formation process has been completed, transporting the lithium secondary battery, measuring temperatures to which the lithium secondary battery has been exposed during the transporting process, measuring a secondary voltage of a lithium secondary battery whose transporting has been completed, revising the secondary voltage to calculate a corrected secondary voltage based on the temperature to which the lithium secondary battery has been exposed, and comparing the primary voltage and the corrected secondary voltage to determine whether the lithium secondary battery is defective.

Method for judging a low voltage defect in a lithium secondary battery

An apparatus for correcting an error of a radar sensor for a vehicle and a method thereof can correct a target measurement error of the radar sensor installed inside a bumper of the vehicle based on target information obtained from a camera image. The apparatus includes: a radar sensor that is installed inside a bumper of the vehicle to detect a target, a camera that photographs a surrounding image of the vehicle, and a controller that corrects a target detection error of the radar sensor based on target information obtained from an image photographed by the camera.

Apparatus for correcting error of radar sensor for vehicle and method thereof

Various embodiments of the present invention relate to an electronic device comprising a wireless communication circuit, and a portable communication device. An electronic device, according to one embodiment, comprises: a housing including a side member that forms the sides of the electronic device; a touchscreen display which is at least partially housed in the housing so as to be visually exposed to the outside; a first conductive portion formed from a first portion of the side member; a second conductive portion formed from a second portion of the side member, opposite to the first portion when viewed from the top of the touch screen display exposed to the outside; and at least one wireless communication circuit electrically connected to a first point within the first portion and a second point within the second portion, wherein the at least one wireless communication circuit can be configured to support transmit diversity by generating a first signal having a first phase of a primary configuration carrier and a second signal having a second phase of the primary configuration carrier, transmitting the first signal through the first conductive portion, and transmitting the second signal through the second conductive portion. Other various embodiments are possible.

Electronic device comprising plurality of transmit antennas and wireless communication control method using same

Lamp

LED lamp

There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

Nitride semiconductor light emitting device

A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Method of forming semiconductor layer and semiconductor light emitting device

There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

Method of fabricating semiconductor light emitting device

There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Method of manufacturing light emitting diode and light emitting diode manufactured thereby

A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Semiconductor light emitting device and fabrication method thereof

The present invention relates to an apparatus for measuring a residual stress of an optical fiber. More particularly, the present invention relates to an apparatus for measuring residual stress of an optical fiber which is provided with a variable polarizer of which rotation is unnecessary instead of a rotary analyzer to measure the residual stress in high resolution and at high speed. There is provided an apparatus for measuring a residual stress of an optical fiber including a light generation unit that generates light; a lens unit that converts the generated light into collimated light; a polarization unit including variable polarization devices that divide the collimated light into two perpendicularly polarized light beams and control phase retardation of the polarized light beams by means of an electrical signal; a measurement unit that allows the divided light beams of two polarization states to penetrate an optical fiber to be measured; and a light detection unit that detects the polarization states of the light beams penetrating the optical fiber.

Apparatus for measuring residual stress of optical fiber

A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Nitride semiconductor light emitting device and method of manufacturing the same

Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

Method of manufacturing nitride-based semiconductor light emitting diode

Growing community of inventors

Kwangjoo, South Korea

Dong Ju Lee