Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Dong Joon Oh

Seung Mo Lim

Tae Joon Park

Sung Min Cho

Kyo Yeol Lee

Hai Joon Lee

Ho Phil Jung

Yun Sung Kang

Seung Hun Han

Sang Wook Lee

Suk Ho Lee

In Young Kang

Sung Wook Kim

Woong Do Jung

Ju Suk Kang

Chang Hak Choi

Won Jae Han

Hyun Ho Shin

Jong Pil Lee

Je Hong Kyoung

Yun Hee Kim

Jong Beom Kim

Jae Sang Lee

A multilayer ceramic capacitor includes a body having a dielectric layer and internal electrodes disposed to be alternately exposed to the third and fourth surfaces with the dielectric layer interposed therebetween. External electrodes include connection parts respectively formed on opposing surfaces of the body, band parts formed to extend from the connection parts to portions of side surfaces of the body, and corner parts in which the connection parts and the band parts are contiguous. A thickness of each of the external electrodes may be 50 nm to 2 &#x3bc;m. The external electrodes may be formed using a barrel-type sputtering method. A ratio t2/t1 may satisfy 0.7 to 1.2, where t1 is a thickness of each connection part and t2 is a thickness of each band part. A ratio t3/t1 may satisfy 0.7 to 1.0, where t3 is a thickness of each corner part.

Multilayer ceramic capacitor

Method of manufacturing a multilayer ceramic capacitor

A multilayer electronic component includes: a capacitor body including first and second internal electrodes disposed to be alternately exposed through opposite surfaces, respectively, with respective dielectric layers interposed therebetween; first and second thin film layers including at least one of titanium nitride (TiN), ruthenium (Ru), platinum (Pt), iridium (Ir), or titanium (Ti), disposed on the surfaces of the capacitor body, and connected to the first and second internal electrodes, respectively; and first and second external electrodes formed on the first and second thin film layers. A thickness of the first or second thin film layer is less than or equal to 60 nm.

Multilayer electronic component and method of manufacturing the same

A semiconductor package includes a frame having a first through-hole, a semiconductor chip disposed on the first through-hole an having an active surface on which a connection pad is disposed and an inactive surface, a first encapsulant covering at least a portion of the inactive surface and a side surface of the semiconductor chip, a connection structure disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pad of the semiconductor chip and a ground pattern layer, a side surface cover layer covering at least an outer side surface of the frame, and a metal layer disposed on the upper surface of the first encapsulant and extending downwardly along the side surface cover layer to cover the side surface cover layer and a portion of the side surface of the connection structure.

Semiconductor package

A multilayer electronic component for enhancing damp proof reliability includes: a capacitor body including a plurality of dielectric layers, and first and second internal electrodes, alternately disposed across the dielectric layers to expose one end of the first and second electrodes through third and fourth surfaces of the capacitor body; first and second conductive layers disposed on the third and fourth surfaces of the capacitor body and connected to the first and second internal electrodes, respectively; first and second plating layers covering surfaces of the first and second conductive layers; and a plurality of coating layers configured in a multilayer structure on a surface of the capacitor body to expose the first and second plating layers and having an entire thickness of 10 nm to 200 nm.

A multilayer ceramic capacitor includes a body including a dielectric layer and internal electrodes with external electrodes disposed on one surface of the body, wherein the external electrodes include a first electrode layer disposed on one surface of the body, in contact with the internal electrodes, and including titanium nitride (TiN), and a second electrode layer disposed on the first electrode layer.

Multilayer ceramic capacitor and method of manufacturing the same

A thin film capacitor includes a body including a lower electrode formed on a substrate, a plurality of first electrode layers, and a plurality of second electrode layers stacked alternately with the plurality of first electrode layers, with one of the dielectric layers interposed therebetween. The lower electrode and the first electrode layer have the same polarity as each other, and surface roughness of the first and second electrode layers is less than that of the dielectric layers, thereby securing capacitance and characteristics of the dielectric layers.

Thin film capacitor and manufacturing method thereof

A thin film capacitor includes a capacitor body formed by alternately stacking first and second electrode layers and a dielectric layer on a substrate, and having the second electrode layer disposed in an uppermost portion thereof, and a stress alleviation layer formed on the uppermost second electrode layer. The stress alleviation layer is formed of a material having a coefficient of thermal expansion higher than those of the substrate and the dielectric layer.

A thin-film capacitor includes a body having a plurality of dielectric layers and first and second electrode layers alternately stacked on a substrate, first and second electrode pads disposed on one surface of the body, a plurality of vias having a multistage shape being disposed in the body, a first via of the plurality of vias connects the first electrode layer to the first electrode pad, and penetrates from the surface of the body to a first lowermost electrode layer adjacent the substrate, a second via of the plurality of vias connects the second electrode layer to the second electrode pad, and penetrates from the surface of the body to a second lowermost electrode layer adjacent the substrate and an upper surface of the first electrode layer is exposed in the first via, and an upper surface of the second electrode layer is exposed in the second via.

Thin-film capacitor

A piezoelectric oscillator, and method of making the same, includes an oscillation substrate comprising an oscillating part and a surrounding part, wherein the surrounding part is thinner than the oscillating part, and oscillating electrodes disposed on an upper surface and a lower surface of the oscillating part. The oscillation substrate is configured according to H=400.59&#xd7;S+1.75&#xb1;1.5, wherein H=100&#xd7;(T/T) and S=T/(L&#x2212;L), wherein Lrepresents an entire length of the oscillation substrate, Lrepresents a length of the oscillating part, Trepresents a thickness of the oscillating part, and Trepresents a step height between the oscillating part and the surrounding part.

Piezoelectric oscillator and method of making the same

A thin film capacitor includes a body having first and second electrode layers and first and second dielectric layers alternately stacked on a substrate. A thickness of the first dielectric layer is 1.2 to 3 times that of the second dielectric layer. Therefore, leakage current characteristics of the dielectric layers may be improved, and capacitance of the thin film capacitor may be secured.

Thin film capacitor including alternatively disposed dielectric layers having different thicknesses

A thin-film ceramic capacitor includes: a body in which a plurality of dielectric layers and first and second electrode layers are alternately disposed on a substrate; and first and second electrode pads disposed on an external surface of the body. The dielectric layer contains a mixed phase of a perovskite phase having ferroelectric properties and a pyrochlore phase having paraelectric properties, the pyrochlore phase being disposed on interfaces between the dielectric layers and the first and second electrode layers in lower portions of the dielectric layers.

Thin-film ceramic capacitor

Embodiments of the invention provide a quartz vibrator, including a long side in a Y' axis direction, a side in the Y&#x2032; axis direction including a first crystal face and a second crystal face formed thereon, and another side including an AT-cut quartz piece including a first crystal face and a second crystal face formed thereon and electrode layers formed on the AT-cut quartz piece.

Growing community of inventors

Suwon-si, South Korea

Dong Joon Oh