Samsung Electronics Co., Ltd.

Dong Joo Yang

Young Chan Kim

Ji Won Lee

Eun Sub Shim

Tae Han Kim

Jung Wook Lim

Moo Sup Lim

Seung Sik Kim

Sung Soo Choi

Min Seok Oh

Doo Sik Seol

Seung Ki Jung

A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.

Semiconductor image sensor including separate low-voltage and high-voltage regions

An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Image sensor and image processing system including the same

Growing community of inventors

Seongnam-si, South Korea

Dong Joo Yang