Samsung Display Co., Ltd.

Yonsei University

Samsung Displayco., Ltd.

Hanwha Chemical Corporation

Dong Jo Kim

Yoon Ho Khang

Sang Ho Park

Chong Sup Chang

Se Hwan Yu

Hyun Jae Na

Yong Su Lee

Yu-Gwang Jeong

Myoung Geun Cha

Jae Neung Kim

Dae Ho Kim

Sang Gab Kim

Jung Kyu Lee

Dong-Hoon Lee

Do-Hyun Kim

Cheol Kyu Kim

Young Min Kim

Yong-Su Lee

Sung Haeng Cho

Jae Kyung Go

Chan Young Park

Hyun Min Hwang

Dong Won Han

Yong Kyu Jang

Su-Hyoung Kang

Dae-Young Lee

Jong Chan Lee

Ji Seon Lee

Gug Rae Jo

Dae Hwan Jang

Jung Gun Nam

Won Il Son

Eui Duk Kim

Seok Heon Oh

Joo Ho Moon

Kyoo Hee Woo

Sang Gap Kim

Sun Jin Park

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Thin film transistor and thin film transistor array panel including the same

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Display device

Display device having first and second chamfered substrates

A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Thin film transistor array panel and manufacturing method thereof

A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

Thin film transistor array panel and method of manufacturing the same

A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

The present invention relates to a method for manufacturing a conductive metal thin film, including: preparing a conductive metal coating solution by adding carboxylic acid to a dispersion including a conductive metal particle having a core/shell structure; coating the conductive metal coating solution on a top portion of a substrate, heat-treating it, and removing an metal oxide layer of the surface of the conductive metal particle having the core/shell structure; and forming a thin film of the conductive metal particle from which the metal oxide layer is removed.

Method for manufacturing conductive metal thin film using carboxylic acid

Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Growing community of inventors

Yongin-si, South Korea

Dong Jo Kim