Haesung Ds Co., Ltd.

Samsung Techwin Co., Ltd.

Samsung Aerospace Industries, Ltd.

Dong-Il Shin

Sung-il Kang

Se-Chul Park

Se-Chuel Park

Bae-soon Jang

Kyu-han Lee

Sung-Kwan Paek

Ju-bong Kim

In-Seob Bae

Sang-hoon Lee

There is provided a lead frame including a plurality of plating layers formed on both an upper surface and a lower surface of a base material including a metal, wherein an upper outermost plating layer of an upper part of the lead frame is a silver plating layer including silver, and a lower outermost plating layer of a lower part of the lead frame is a gold plating layer including gold.

Lead frame, semiconductor package including the lead frame, and method of manufacturing the lead frame

The present invention provides a lead frame having excellent solder wettability and solderability, that is well-bonded to a copper wire, and manufactured with low cost, and a semiconductor package manufactured by using the same. The lead frame includes: a base material; a first metal layer formed on at least one surface of the base material, the first metal layer comprising nickel; a second metal layer formed on a surface of the first metal layer, the second metal layer comprising palladium; and a third metal layer formed on a surface of the second metal layer, the third metal layer comprising silver.

Lead frame and semiconductor package manufactured by using the same

A method for manufacturing a lead frame including the steps of electrocleaning the surface of a thin plate material, electropolishing the electrocleaned thin plate material, removing inclusions on the surface of the electropolished thin plate material, rinsing the inclusion-removed thin plate material with an acidic solution, and forming multi-plated layers on the rinsed material. The lead frame manufactured by the method has 5 or less inclusions each having approximately 1 &mgr;m, on the surface area of 1600 &mgr;m , which impede a wire bonding property or solder wettability of the lead frame.

Lead frame and method of manufacturing the lead frame

A lead frame plating method including the steps of (a) forming an intermediate layer on the upper surface of a metal substrate, (b) submerging the metal substrate into a plating solution, and (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.

Lead frame for semiconductor package and lead frame plating method

Growing community of inventors

Changwon, South Korea

Dong-Il Shin