Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Dong-Il Seo

Jong-Hyun Choi

Young-Hun Seo

Se-jin Jeong

Kyu-Chan Lee

Jong-hyun Choi

Sang-Moon Moh

Sei-seung Yoon

Myeong-Su Kim

Man-Sung Kim

Gi-Hong Kim

Hoon Moo Choi

Jin-Ho Park

Jin-ho Park

Hyun-Soon Jang

Jun-Young Jeon

Soo-In Cho

Jung-Sik Kim

Nam-Jong Kim

Young-Sun Min

Hyung-Dong Kim

Seung-Moon Yoo

Woo-Seop Jeong

Yong-Cheol Bae

Jae-yoon Sim

Tae-Seong Jang

Jung-yong Choi

Jae-hoon Kim

Bok-Gue Park

Young-hun Seo

Yong-Gu Kang

Je-Hwan Ryu

Hyung-dong Kim

Hyo-Jin Oh

Jong-sik Na

A display panel includes a timing controller embedded data driver and a first data driver. The timing controller embedded data driver includes an image processing part and an internal data driving part. The image processing part generates a first data signal corresponding to a first display area and a second data signal corresponding to a second display area based on input image data. The internal data driving part generates a second data voltage based on the second data signal to output the second data voltage to the second display area. The first data driver is disposed at a first side of the timing controller embedded data driver. The first data driver receives the first data signal from the timing controller embedded data driver and generates a first data voltage based on the first data signal to output the first data voltage to the first display area.

Display panel with a timing controller embedded data driver and display apparatus including the same

In a voltage generating circuit for a semiconductor memory device, each of a plurality of reset signal generators individually generates a reset signal in response to one of a plurality of external source voltages. The plurality of external source voltages have different voltage levels. An output voltage generator generates a plurality of output voltages by independently driving each of the plurality of external source voltages in response to a corresponding one of the plurality of reset signals. The output voltage generator outputs the plurality of output voltages through a common output terminal.

Voltage generating circuits for semiconductor memory devices and methods for the same

A memory that includes a plurality of packet pins, a synchronous memory, and a packet controller. The synchronous memory receives address and control signals in synchronization with a clock signal. The packet controller sequentially receives packet data bits through the packet pins in synchronization with the clock signal when a packet enable signal is activated, and converts the inputted packet data into the address and control signals. Specifically, packet data bits that are first inputted through the packet pins represent an operation mode.

Memory using packet controller and memory

A temperature detecting circuit is provided. The temperature detecting circuit includes a reference and detection voltage generator for generating a reference voltage corresponding to a first and a second reference current, and changing first to M-th (M being a natural number) detection currents based on first to M-th temperature detection codes to generate first to M-th detection voltages corresponding to the changed first to M-th detection currents and the second reference current; a temperature detection signal generator for comparing each of the first to M-th detection voltages with the reference voltage to generate first to M-th temperature detection signals; and a temperature detection controller for detecting an operation temperature of a semiconductor device while changing the first to M-th temperature detection codes in response to the first to M-th temperature detection signals from the temperature detection signal generator.

Temperature detecting circuit

An internal reference voltage generating circuit that reduces a standby current and the number of pins of a semiconductor memory device, in which a reference voltage is provided to an input buffer that receives a signal through an input to which an on die transmitor resistor is connected, includes: a voltage dividing circuit outputting the reference voltage by a power voltage; a pull down driver connected to an end of the voltage dividing circuit; and a calibration control circuit comparing a voltage level of the input and a voltage level of an end of the voltage dividing circuit, and controlling the on resistor value of the pull down driver according to a result of the comparison. The internal reference voltage generating circuit is operated while the memory controller inputs a signal into a mode register set (MRS) to enable the internal reference voltage generating circuit and the output signal of the MRS is activated.

Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the same

A temperature sensor instruction signal generator, which may drive a temperature sensor, and a semiconductor memory device including the same. The temperature sensor instruction signal generator may generate an instruction signal that instruct the operation of the temperature sensor using at least one of a master clock (CLK) signal, a clock enable (CKE) signal, a row address selection (RAS) signal, a column address selection (CAS) signal, a write enable (WE) signal, and a chip selection (CS) signal, wherein the instruction signal may be enabled corresponding to at least one of a self refresh mode, an auto refresh mode, and a long tRAS mode. The semiconductor memory device may include a temperature sensor and the temperature sensor instruction signal generator.

Temperature sensor instruction signal generator and semiconductor memory device having the same

A dynamic random access memory (DRAM) device, including a DRAM core having memory cells for storing data information, and a read protection unit, prevents data stored in the memory cells before power-off, from being read out at power-on.

Methods and devices for preventing data stored in memory from being read out

A semiconductor memory device that includes a memory cell array having a plurality of memory cells that are connected between a bit line pair, which transfers data to the bit line pair, a precharge circuit for precharging the bit line pair to a precharge voltage level during a precharge period, and one or more bit line sense amplifiers which are connected between the bit line pair and detect a voltage difference of the bit line pair to amplify a level of the bit line pair. The semiconductor memory device includes one or more FINFETs.

Semiconductor memory device

The input buffer is driven by a data input/output supply voltage. The input buffer generates an output signal from an input signal that swings between the data input/output supply voltage and a data input/output ground voltage.

Input buffer with wide input voltage range

A memory device according to the present invention includes multiple refresh modes and a refresh controller. A first refresh mode can respectively select one more memory block among a plurality of banks comprising a plurality of blocks and each of all banks. In addition, the first refresh mode may perform a refresh operation with respect to selected memory blocks. The second refresh mode can select a part of the banks and perform a refresh operation of data with a selected bank. The controller may select one of the first and second refresh modes in a refresh operation.

Semiconductor memory device for performing refresh operation

A plurality of internal circuits of a memory device are operable at first and second internal voltages, where the first internal voltage is less than the second internal voltage. A first power port of the memory device receives a first power supply voltage, and a second power port of the memory device receives a second power supply voltage, where the first power supply voltage is less than the second power supply voltage. An internal voltage generation circuit of the memory device is selectively operable in either a first mode in which the second internal voltage is generated from the first power supply voltage, or a second mode in which the second internal voltage is generated from the second power supply voltage.

Memory device having dual power ports and memory system including the same

A semiconductor memory device and a failed cell address programming circuit usable therein. The semiconductor memory device as packaged includes a memory cell array having a plurality of memory cells accessed by an internal address, a plurality of redundant memory cells accessed by a failed cell address of a failed memory cell for repairing a failed memory cell, a comparator for comparing data output from the memory cells during testing the semiconductor memory device as packaged and generating a comparative correspondence signal, a mode setting register for storing an externally applied failed cell address programming control signal in response to a mode control signal, an address generating circuit for generating the internal address by buffering and latching an externally applied address, a failed cell address programming circuit for latching the internal address output from the address generating circuit in response to the failed cell address programming control signal when the comparative accordance signal indicates that a failed memory cell is detected and programming the failed cell address which is an address for accessing the failed memory cell; and a failed cell address decoding circuit for generating a redundant selection signal when the internal address output from the address generating circuit and the failed cell address output from the failed cell address programming correspond.

Failed cell address programming circuit and method for programming failed cell address

A dynamic random access memory device includes a circuit for generating sense amplification activation signals applied to sense amplifier circuits. The circuit changes the slopes of the activation signals according to variation of a power supply voltage. According to the present invention, the peak current the sense amplifier circuits use when the power supply voltage increases, is reduced, so that the sense amplifier circuits create less noise in the memory device.

Growing community of inventors

Yongin-si, South Korea

Dong-Il Seo