Skhynix Inc.

Dong Ik Suh

Se Ho Lee

Jae Gil Lee

Jae Hyun Han

Won Tae Koo

A semiconductor device according to an embodiment of the present disclosure includes a substrate, a first epitaxial electrode layer disposed on the substrate, a ferroelectric epitaxial layer disposed on the first epitaxial electrode layer, a dielectric epitaxial layer disposed on the ferroelectric epitaxial layer, and a second epitaxial electrode layer disposed on the dielectric epitaxial layer. The ferroelectric epitaxial layer implements a negative capacitance. Each of the first and second epitaxial electrode layers includes conductive pyrochlore oxide. The ferroelectric epitaxial layer and the dielectric epitaxial layer are electrically connected in series is non-ferroelectric. A dielectric structure comprising the ferroelectric epitaxial layer and the dielectric epitaxial layer is non-ferroelectric.

Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same

A semiconductor device includes a substrate, a bit line conductive layer disposed on the substrate and extending in a first lateral direction substantially parallel to a surface of the substrate, first and second channel structures disposed on the bit line conductive layer to be spaced apart from each other in the first lateral direction, first and second gate dielectric layers disposed on side surfaces of the first and second channel structures over the substrate, first and second gate line conductive layers disposed on the first and second gate dielectric layers, respectively, the first and second gate line conductive layers common to the first and second channel structures, respectively, and extending in a second lateral direction perpendicular to the first lateral direction and substantially parallel to the surface of the substrate, and first and second storage node electrode layers disposed over the first and second channel structures, respectively.

Semiconductor device having transistor device of three-dimensional structure

A semiconductor device according to an embodiment includes a substrate, a bit line structure and a source line structure respectively extending in a direction perpendicular to a surface of the substrate, a semiconductor layer disposed between the bit line structure and the source line structure on a plane parallel to the surface of the substrate, a first ferroelectric layer disposed on a first surface of the semiconductor layer, and a first gate electrode layer disposed on the first ferroelectric layer.

Semiconductor device including ferroelectric layer and method of manufacturing the same

A semiconductor device may include: a first electrode; a second electrode; and a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer, wherein each of the seed layer and the high-k dielectric layer may have a rocksalt crystal structure, and wherein the high-k dielectric layer may exhibit a dielectric constant (k) of fifty (50) or higher.

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Icheon-si, South Korea

Dong Ik Suh