Korea Institute of Science and Technology

Dong Ick Son

Won Kook Choi

Dong Hee Park

Ji Won Choi

Myung Jong Kim

Jung Kyu Kim

Jong Hyeok Park

Seokhoon Ahn

Se Gyu Jang

Soo Min Kim

Sang Yub Ie

Byoung Wook Kwon

Gee Woo Chang

Hyun Jin Cho

Su Kang Bae

Jun Hee Kim

Tae Hoon Seo

Provided is a method for preparing boron nitride nanotubes, the method including: injecting a boron-metal catalyst composite into a reaction chamber; injecting a nitrogen precursor into the reaction chamber; producing a decomposition product of the boron-metal catalyst composite in a gas state by irradiating the boron-metal catalyst composite with a carbon dioxide laser or a free electron laser; and forming boron nitride nanotubes by reacting the decomposition product of the boron-metal catalyst composite in the gas state with the nitrogen precursor.

Method for preparing boron nitride nanotubes

The present invention relates to a photocatalyst using a semiconductor-carbon nanomaterial core-shell composite quantum dot and a method for preparing the same, more particularly to a microparticle in which a semiconductor-carbon nanomaterial core-shell composite quantum dot is self-assembled using 4-aminophenol, capable of improving photoelectrochemical response and photoconversion efficiency when used as a photocatalyst or a photoelectrode of a photoelectrochemical device, a photoelectrochemical device using the same and a method for preparing the same.

Photocatalyst using semiconductor-carbon nanomaterial core-shell composite quantum dot and method for preparing the same

Disclosed are methods for preparing pure graphene using chemical bonding between graphite oxide and metal oxide nanoparticles, and graphene and nanoparticles having a quasi metal oxide-graphene core-shell prepared therefrom. The disclosed methods for preparing graphene allow chemical bonding and separation through a simple acid treatment process using inexpensive materials. Also, because the reaction can be carried out at low temperature, the processing cost is low. And, pure graphene with few impurities can be prepared quickly in large scale.

Method for producing graphene by chemical exfoliation

The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage. Also, since the device can be driven by an AC voltage, limitations of an existing DC voltage-driven organic light emitting diode, that is, destruction or a defect of the device by an overcurrent and generation of a dark spot by degradation of local constituent organic materials are solved.

AC-driven light emitting device having single active layer structure and manufacturing method thereof

Growing community of inventors

Jeollabuk-do, South Korea

Dong Ick Son