Globalfoundries Singapore Pte. Ltd.

Dong Hyun Shin

Jeoung Mo Koo

Ming Li

Upinder Singh

Lwin Min Kyaw

Yunpeng Xu

Sivaramasubramaniam Ramasubramaniam

Chenji Zou

Di Wu

Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. The structure comprises a drain and a source in a semiconductor substrate. The source includes a source region having a first terminating end, a second terminating end, and a length between the first terminating end and the second terminating end. The structure further comprises a shallow trench isolation region in the semiconductor substrate. The shallow trench isolation region surrounds the drain. The structure further comprises a gate that surrounds the shallow trench isolation region and the drain. The gate has a side section between the drain and the source region, the side section of the gate has a width, and the gate has a length in a direction transverse to the width. The length of the source region is substantially equal to the length of the gate.

Structures for a laterally-diffused metal-oxide-semiconductor transistor

According to various embodiments, a transistor device may include a substrate. The transistor device may further include a drain terminal and a source terminal formed in the substrate, and a gate terminal formed over the substrate. The transistor device may further include an insulator structure arranged between the drain terminal and the source terminal, and at least partially under the gate terminal. The insulator structure may include an oxide member and a trench isolation region. The oxide member may be at least partially formed over the trench isolation region.

Transistor devices and methods of forming a transistor device

Growing community of inventors

Singapore, Singapore

Dong Hyun Shin