Samsung Electronics Co., Ltd.

Dong Hyun Roh

Sung Soo Kim

Chae Ho Na

Sang Jin Hyun

Gyu Hwan Ahn

Hyun Gi Ahn

Koung Min Ryu

Seung Eun Lee

Min Hee Jang

Ji Eun Kim

Ik Soo Kim

Sun Ki Min

Kyung Sub Min

Joo Yoo Kim

Tae Ho Kim

Jun Hui Kim

Da Som Lee

Jae Woong Chun

Woong Sik Nam

Dong Geon Kim

Sang Koo Kang

No Ah Lee

Chung Ki Lee

Kwang Yuel Ryu

Byoung Jip Kim

David Rim

Sun Hye Lee

Pravinsagar Prabakaran

A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

Semiconductor device

A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

Semiconductor devices including epitaxial patterns with plurality of fin-shaped patterns

Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

Semiconductor devices and methods for manufacturing the same

A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

Semiconductor device and method of fabricating the same

An electronic device according to various embodiments may comprise a memory in which one or more applications are installed, a communication circuit, and a processor, wherein the processor is configured to acquire audio data during execution of a designated application among the one or more applications, wherein the acquiring of audio data comprises an operation of storing, in the memory, at least a portion including multiple pieces of phoneme information among the audio data, when a designated condition is satisfied, transmit the at least portion to an external electronic device so that the external electronic device generates designated information for execution of at least one application among the one or more applications by using at least a part of the multiple pieces of phoneme information stored before the designated condition is satisfied, and on the basis of the designated information, execute the at least one application in relation to the designated application.

Electronic device for executing application by using phoneme information included in audio data and operation method therefor

An electronic device includes a microphone, a processor, and a memory. The memory stores an application for monitoring user information, and the memory stores instructions that, when executed by the processor, cause the electronic device to record a plurality of parameters associated with the user information in the application when a predefined event occurs to record a first parameter and the first parameter is not recorded in the application, to output a message for obtaining the first parameter, to receive a user response associated with the first parameter, to transmit data associated with the user response to an external server, to receive a first response from the external server, and to record the first parameter in the application by allowing the electronic device to have information about sequences of states of the electronic device. The first response includes information about sequences of states of the electronic device for recording the first parameter in the application.

Electronic device for obtaining and entering lacking parameter

An electronic device includes a sensor, a processor, and a memory configured to store at least one instruction executed by the processor, wherein the processor is configured to collect activity information on a user related to the electronic device by using the sensor, the collecting of the activity information including creating an amount of activity of the user for a specific goal or an activity engagement level for the specific goal by using the activity information, adjust at least one of an output time point, an output cycle, the number of outputs, or the output contents of the activity guide information for the user to an activity guide parameter at least based on the amount of activity or the activity engagement level, and output the activity guide information created by using the adjusted activity guide parameter through an output device operatively connected to the processor.

Method for providing action guide information and electronic device supporting method

A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

An electronic device and a method for activity information are provided. The electronic device includes a sensor configured to collect sensing information according to a motion of the electronic device, and at least one processor operatively connected with the sensor. The at least one processor is configured to control for obtaining activity information including at least one of an exercise amount that is calculated based on first sensing information obtained according to execution of a specified workout, and a movement amount that is calculated based on second sensing information obtained according to a daily life, determining an expected value of an activity amount, by which a user works out, during a specific time period by a user based on the activity information, and providing guide information for achieving an activity goal associated with the user based on at least one of the expected value of the activity amount and the activity information.

Activity information providing method and electronic device supporting the same

An electronic device includes a display, communication circuitry, at least one sensor, and a processor electrically connected with the display and the at least one sensor. The processor is configured to, based on state information obtained by the at least one sensor satisfying a predefined condition when a health state of a user corresponds to a first state, control transmitting the state information to an external server through the communication circuitry, control receiving from the external server a symptom check result corresponding to the state information, set a health state of the user to a second state based on the symptom check result, and provide a user interface (UI) for user health management at least once until the health state of the user changes from the second state to the first state based on at least one of the state information and the symptom check result.

Growing community of inventors

Gyeonggi-do, South Korea

Dong Hyun Roh