Samsung Electronics Co., Ltd.

Dong-Hyun Roh

Sang-Jin Hyun

Dong-Suk Shin

Pan-Kwi Park

Nae-in Lee

Sung-Soo Kim

Yong-sung Kim

Hoi-Sung Chung

Tae-ung Jung

Young-Tak Kim

Chul-Woong Lee

Geo-Myung Shin

So-hee Jang

Hyun-Chul Kang

Gyu-Hwan Ahn

Chae-Ho Na

Jin-wook Lee

Dae-Young Kwak

Min-chan Gwak

Ji-ye Kim

Jung-hwan Chun

Yong-Kuk Jeong

Hee-Seon Park

Ha-Jin Lim

Seong-hoon Kang

Kyoung-Gu Woo

Won-ho Ryu

Hye-Soo Lee

Chang-hwan Choi

Sung-Ho Ryu

Soo-Jung Choi

Hyun-Mi Kwak

Moon-Bae Song

Suk-un Kim

Yeong-geol Kim

Seng-su Nam

Sang-Mi Kim

A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.

Semiconductor devices

An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Method of forming an integrated circuit device having a contact capping layer

Integrated circuit device having fin-type active

A semiconductor device may include active fins spaced apart from each other by a recess therebetween, each of the active fins protruding from an upper surface of a substrate, an isolation structure including a liner on a lower surface and a sidewall of a lower portion of the recess and a blocking pattern on the liner, the blocking pattern filling a remaining portion of the lower portion of the recess and including a nitride, a carbide or polysilicon, a gate electrode structure on the active fins and the isolation structure, and a source/drain layer on a portion of each of the active fins adjacent to the gate electrode structure.

Provided are a method and apparatus for providing digital content and a method and apparatus for displaying digital content. In the displaying method, method of displaying content in a terminal, situational information including at least one of information regarding a user of the terminal and information regarding an external environment is collected, whether the collected situational information conforms to display conditions of the content is determined, and then, the content is selectively displayed based on a result of the determining.

Method and apparatus for providing content and method and apparatus for displaying content

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Semiconductor devices including a stressor in a recess and methods of forming the same

A method and apparatus for browsing a plurality of broadcast programs are provided. The method includes classifying a plurality of broadcast programs into one or more broadcast program groups with reference to electronic program guide (EPG) information or viewing records of a user regarding the broadcast programs, one-dimensionally arranging the broadcast programs so that the broadcast program groups are one-dimensionally arranged, displaying the broadcast programs and the broadcast program groups on a screen as a graphic image, and allowing the user to change a rule used for forming the broadcast program groups. Accordingly, it is possible to enable a user to effectively browse broadcast programs and to provide the user with a user interface customized for the user by using a simple one-dimensional input method and intuitively utilizing EPG information.

Method and apparatus for browsing broadcast programs using dynamic user interface

A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si&#x2014;H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.

Method of forming semiconductor device using Si-H rich silicon nitride layer

An apparatus and method to search content in a multimedia device, and more particularly, an apparatus and method to efficiently search content in a multimedia device using various metadata of the content, the apparatus including: a content storage unit to store content; a metadata storage unit to store metadata of the stored content; a user input unit to receive an input of a current arrangement standard, from one or more arrangement standards corresponding to the metadata, from a user; a content arrangement unit to arrange the stored content according to the current arrangement standard; and a user interface provision unit to provide a user interface that displays the arranged content.

Apparatus and method to search content in multimedia device

Disclosed are a terminal and a blogging method thereof. In the blogging method, a preview image displayed through a camera is recognized to acquire information of the preview image. It is determined whether there is a stored blog that has background information that is identical to the information of the preview image, and if a stored blog has background information that is identical to the information of the preview image, contents of the stored blog that uses the preview image as its background are imported and the imported contents are displayed on the preview image.

Terminal and blogging method thereof

Growing community of inventors

Suwon-si, South Korea

Dong-Hyun Roh