Samsung Electronics Co., Ltd.

Dong-hyun Lee

Dong-hun Yoo

Jay-Bok Choi

Seunguk Han

Namho Jeon

Won-kyu Lim

Tae-woon Lim

Tae-Kwang Kim

A handy-stick type vacuum cleaner is disclosed. The disclosed vacuum cleaner can comprise: a first part including a dust collection unit; a second part including a suction motor and a handle; a third part for connecting the first and second parts such that the first and second parts rotate with each other; and a mode setting unit disposed inside the second part so as to selectively lock and unlock the third part, thereby setting a rotating mode enabling the first and second parts to rotate with each other and a fixing mode disabling the rotation thereof.

Handy-stick type vacuum cleaner

An anti-fuse device includes a program transistor and a read transistor. The program transistor executes a program via insulation breakdown of a gate insulating layer. The read transistor is adjacent to the program transistor and reads the state of the program transistor. At least one of a first gate electrode of the program transistor or a second gate electrode of the read transistor is buried in a substrate.

Anti-fuse device, memory device including the same and semiconductor device comprising an anti-fuse device

Anti-fuse device and memory device including the same

Vacuum cleaner

A semiconductor device includes a cell region including memory cells that have a selection element and a data storage element, and a driving circuit region including a driving transistor configured to operate the selection element. The driving transistor includes active portions defined by a device isolation pattern in a substrate and a gate electrode running across the active portion along a first direction, the gate electrode including channel portions of a ring-shaped structure. The driving transistor further includes first impurity doped regions disposed in the active portions that are surrounded by channel portions, and second impurity doped regions disposed in the active portion that are separated from the first impurity doped regions by the channel portions.

Semiconductor devices

Growing community of inventors

Hwaseong-si, South Korea

Dong-hyun Lee