Industry-University Cooperation Foundation Hanyang University

Dong Hwan Lim

Chang Hwan Choi

Disclosed are a three-dimensional tunneling field-effect transistor and a method of fabricating the same. A method of fabricating a three-dimensional tunneling field-effect transistor according to an embodiment of the present disclosure includes growing a buffer layer, an embedded source layer, an etch stop layer, an active source layer, a channel layer, and a drain layer on a substrate; depositing a metal layer on the drain layer, and then forming a pattern in a mesa structure shape; forming a vertical gate at one end of each of the etch stop layer, the active source layer, the channel layer, and the drain layer; isolating the active source layer from the substrate to form a first air bridge; isolating the drain layer from the substrate to form a second air bridge; and isolating the vertical gate from the substrate to form a third air bridge.

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Suwon-si, South Korea

Dong Hwan Lim