Samsung Electro-mechanics Co., Ltd.

Skhynix Inc.

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Naver Labs Corporation

Hyundai Motor Company

Hynix Semiconductor Inc.

Yonsei University

Snur & Db Foundation

Inha-industry Partnership Institute

Kia Motor Corporation

Dong Hwan Lee

Chan Young Yoon

Young Ghyu Ahn

Dong Jin Lee

Sang Soo Park

Hwi Dae Kim

Won Chul Sim

Hee Soo Yoon

Jin Min Cheon

Min Gyum Kim

Hye Mi Yoo

Tae Young Kim

Hye Yeon Cha

Min Gyu Koo

Jin Woo Choi

Hyun Heo

Joo Young Chung

Ki Hyeok Kwon

Eun Seok Choi

Ji Hun Ryu

Moon Soo Park

Jin Gu Kim

Seung Ho Han

Hwan Sung Cheon

Yeonghun Lee

Kwang Hyun Baek

Seung Kyun Hong

Jae Cheol Ju

Don Chul Choi

Jung Seob Kim

Deok Hwa Kim

In Soo Lee

Su Yong Yeon

Soo Hyun Ryu

Seung Wook Park

Jong Ho Lee

Woo Jin Lee

Won Seok Lee

Sang Jin Kim

Hyun Chul Kim

Hyon I Kim

Jung Hyuk Jung

Youn Soo Kim

Sang Kyun Kim

Hye Min Bang

Jong-Ryun Choi

Seung Ryong Han

Su Yul Seo

Seo Hyun Kim

Ji Hyun Eom

Christian Romero

Young Joon Lee

Jae Hyung Jo

Ho Jin Yun

So Young Park

Jeong An Hong

Min Sun Park

Yong Han Cho

Tae Shin Eom

Alex Joo

Min Cheol Park

Jun Jin Kong

Byoung Hwa Lee

Hong Rak Son

Yong Jong Park

Ki Pyo Hong

Young Ho Kim

Won Ki Hong

Young Do Kweon

Soo Yeon Kim

Eun Jung Lee

Weon Jun Choe

Jin Woo Han

Chang Bae Lee

Seong Ook Jung

Young Jae Park

Seung Ki Sul

Jong Sik Yoon

Kyung Min Choi

Young Ok Hong

Sung Jae Chung

Chang Kyu Seol

Sung Yeol Park

Chang Hoon Shim

Yong Soon Park

Sang Jin Park

Seung Won Kim

Jung Woon Shim

Ju Gon Seok

Sung Ho Jin

Jin Ho Ku

Ji Hun Oh

Kay Park

Jae Young Oh

Yoon Man Lee

Min Kyu Park

Jin Ok Han

Chae Eun Lee

Su Ho Kim

Jeong Hee Kim

A coil component includes a body having an upper surface and a lower surface opposing each other in a thickness direction, a support substrate disposed in the body and having one surface perpendicular to the lower surface of the body, a coil portion disposed on the support substrate, and first and second external electrodes disposed on the lower surface of the body. The body includes an active portion, covering the coil portion, and first and second cover portions, respectively disposed on opposing surfaces of the active portion. The active portion includes a first magnetic metal particle, a second magnetic metal particle having a smaller diameter than the first magnetic metal particle, and a first insulating resin. Each of the first and second cover portions includes a third magnetic metal particle, having a smaller diameter than the first magnetic metal particle, and a second insulating resin.

Coil component

A display device includes a display panel; a metal plate and a filling member which are disposed on a lower surface of the display panel, are disposed on the same layer, and include different materials; and a fingerprint sensor which is disposed on a lower surface of the filling member and is overlapped by the filling member in a thickness direction, wherein the metal plate includes a plurality of outlines extending in different directions in plan view, one outline of the metal plate includes a plurality of sides extending along a first direction and a discontinuous part disposed between the sides, an open part recessed from the discontinuous part in a second direction intersecting the first direction is formed in the metal plate, and the filling member is located in the open part in plan view.

Display device

There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a gate stack structure including interlayer insulating layers and conductive patterns, which are alternately stacked in a vertical direction on a substrate; a plurality of channel structures penetrating the gate stack structure, each of the plurality of channel structures with one end portion protruding past a boundary of the gate stack structure; and a source layer formed on the gate stack structure. The protruding end portion of each of the plurality of channel structures extends into the source layer. The protruding end portion of each of the plurality of channel structures has a flat section.

Semiconductor memory device and manufacturing method thereof

A coil component includes a body, a planar spiral-shaped coil portion disposed in the body, a lead portion disposed to be spaced apart from the coil portion in the body, a support substrate disposed between the coil portion and the lead portion to correspond to the lead portion, a via penetrating through the support substrate to connect an internal end portion of the coil portion and an internal end portion of the lead portion to each other, an insulating layer covering the coil portion and the lead portion, and a first external electrode and a second external electrode disposed to be spaced apart from each other on a surface of the body and connected to the external end portion of each of the coil portion and the lead portion.

Provided is a display device comprising a display panel, a metal plate on a bottom surface of the display panel, the metal plate including a first surface facing the bottom surface of the display panel and a second surface opposite to the one surface, and a fingerprint sensor overlappingly disposed on the second surface of the metal plate, wherein the metal plate includes an indentation groove recessed in a direction toward the first surface from the second surface of the metal plate, and the fingerprint sensor is disposed on the second surface of the metal plate on which the indentation groove is formed.

A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Semiconductor memory device of vertical channel structure and method of manufacturing the same

A localization method includes scanning a surrounding space by using laser outputted from a reference region; processing spatial information about the surrounding space based on a reflection signal of the laser; extracting feature vectors to which the spatial information has been reflected by using a deep learning network which uses space vectors including the spatial information as input data; and comparing the feature vectors with preset reference map data, and thus estimating location information about the reference region.

Method and system for localization

A display device includes a compensation value determiner which generates final compensation values for an input image, a timing controller which receives input grayscales of the input image and generate output grayscales by applying the final compensation values to the input grayscales, and a pixel unit which displays an output image corresponding to the output grayscales using pixels. The compensation value determiner determines weights based on display frequencies, display brightnesses, and the input grayscales, the compensation value determiner determines compensation values based on the display frequencies and positions of the pixels, and the compensation value determiner generates the final compensation values by applying the weights to the compensation values.

Integrated circuit, display device, and method of driving the display device

A coil component includes a support substrate, first and second coil units disposed on the support substrate and spaced apart from each other, and a body having a first core and a second core spaced apart from the first core. The first and second coil units include first and second winding portions having at least one turn around the first and second cores, respectively, and first and second extension portions respectively extending from the first and second winding portions, each of the first and second extension portions surrounding the first and second cores. The first and second winding portions are spaced apart from each other in a direction in which the first extension portion extends from the first winding portion.

There are provided a semiconductor memory device and a manufacturing method of the same. The semiconductor memory device includes: a stack structure including conductive patterns and interlayer insulating layers, which are alternately stacked in a first direction; a channel layer penetrating the stack structure; a first semiconductor layer disposed on the stack structure, the first semiconductor layer including a first impurity of a first conductivity type; a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer including a well region with a second impurity of a second conductivity type, wherein the second conductivity type is different from the first conductivity type; and a memory layer between the channel layer and the stack structure.

Semiconductor memory device and manufacturing method of semiconductor memory device

A coil component includes a body, a coil portion disposed in the body, and first and second external electrodes disposed on the body to be spaced apart from each other, wherein A/C≥2.4 and B/C≥1.6 are satisfied, where a length, a width, and a thickness of the coil component are defined as 'A', ‘B’, and ‘C’, respectively, and a ratio of a thickness to a width of at least one turn of the coil portion is 1 or less, based on a cross-section of the coil component.

A coil component includes a core portion, and first and second coil portions wound to form at least one or more turns on the core portion. The core portion includes a first core portion on which the first coil portion is wound, a second core portion on which the second coil portion is wound, and a third core portion which is disposed to be spaced apart from and between the first and second core portions and on which the first and second coil portions are wound to overlap each other.

A coil component includes a body, a coil portion disposed in the body and having first and second lead-out portions exposed to at least one surface of the body to be spaced apart from each other, first and second external electrodes disposed on the at least one surface of the body to be spaced apart from each other, and respectively connected to the first and second lead-out portions, a dielectric layer disposed on a surface of the body, and a third external electrode disposed on the surface of the body having the dielectric layer disposed thereon to be spaced apart from each of the first and second external electrodes, and covering the dielectric layer.

A coil component includes a body having a core, a coil portion disposed in the body and having a central portion in which the core is disposed, a first external electrode and a second external electrode, each connected to the coil portion, a third external electrode spaced apart from each of the first and second external electrodes, and a noise removal portion disposed to at least partially surround the coil portion between a surface of the body and the core and having both end portions, each connected to the third external electrode.

A visual localization method includes generating a first feature point map by using first map data calculated on the basis of a first viewpoint; generating a second feature point map by using second map data calculated on the basis of a second viewpoint different from the first viewpoint; constructing map data for localization having the first and second feature point maps integrated with each other, by compensating for a position difference between a point of the first feature point map and a point of the second feature point map; and performing visual localization by using the map data for localization.

Method and system for visual localization

Growing community of inventors

Suwon-si, South Korea

Dong Hwan Lee