Korea Advanced Nano Fab Center

Sungkyunkwan University

Dong Hwan Jun

Jin Hong Park

Chan Soo Shin

Jong Gon Heo

Jae Woo Shim

Hyun Mi Kim

Sang Tae Lee

A nanoscale thin film structure and implementing method thereof, and, more specifically, a nanoscale thin film structure of which target structure is designed with quantized thickness, and a method to implement the nanoscale thin film structure by which the performance of the manufactured nanodevice can be implemented the same as the designed performance, thereby applicable to high sensitivity high performance electronic/optical sensor devices.

Nanoscale thin film structure and implementing method thereof

This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600&#x2dc;700&#xb0; C. for 1&#x2dc;3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

Method of healing defect at junction of semiconductor device using germanium

Growing community of inventors

Gyeonggi-do, South Korea

Dong Hwan Jun