Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Other

Korea Institute of Science and Technology

Lg Electronics Inc.

Sd Biosensor, Inc.

Lg-nortel Co., Ltd.

Secugen Corporation

Dong Hun Kim

Seok Hyun Yoon

Jung Deok Park

Chang Hak Choi

Chan Hee Nam

Moon Soo Park

Byung Kun Kim

Byung Chul Jang

Jae Hun Choe

Jae Young Kim

Sun Young Lee

Wan Jae Park

Dong Sub Oh

Seong Gil Lee

Young Je Um

Hae Joon Park

Myoung Sub Noh

Hyo Lim Park

Young Shik Cho

Hyo Guen Lee

Kwan Hun Lim

In Ae Kim

Jin Woo Kim

Ji Hwan Lee

Du Ri Kim

Joun Taek Koo

Sung H Hong

Seonkeun Park

Jinie Ryu

Jooho Seo

Jong Kon Bae

Jung Wook Seo

Kwang Tai Kim

Dong Kyun Kim

Song Hee Jung

Hyung Sup Byeon

Sang Soo Han

Jong Suk Jeong

Tomohiro Harata

Dong Geon Yoo

Joung Min Cho

Kyong Rok Kang

Pil Won Kim

Joo Ho Seo

Jung Chul An

So Young Lee

Seung Min Lee

Seung Ho Lee

Taesung Kim

Seung Yong Lee

Sung Kwon Wi

Jungchul An

Jong Hwa Lee

Jung Won Lee

Ji Hyun Lee

Na-Young Kim

Chang-Ryong Heo

Jung Sik Park

Keun Young Kim

Min-Sung Lee

Hyun Soo Kim

Hyunchang Shin

Kwang-Tai Kim

Hyok Su Choi

Dong-Hyun Yeom

Jong-Kon Bae

Dong Kyoon Han

Bumsoo Park

Min Hyouk Lee

Hyungsup Byeon

Iksang Kim

Dong Hwy Kim

Jong Chul Choi

Youngsang Jang

Dong Won Lee

Il Doo Kim

Min Sung Lee

Jong Hoon Yoo

Jeong Wook Seo

Sung-Hun Sim

Taek Ki Lee

Jun Ho Ahn

Mi Yang Kim

Min Sung Han

Seung Ah Oh

Su Been Kim

Chun Hee Seo

Jung Hyeong Ha

Joung-Min Cho

Byung Chul Yeo

Seung Hun Choi

Hyo Bin Nam

Chung Ha Kim

Na-Kyoung Lee

Harim Kim

Seongwon Cha

Seung Chul Kim

Han Gil Song

Soo Min Hwang

Soon Won Jung

A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the first direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.

Substrate processing apparatus and method using the plasma

A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.

Method for fabricating semiconductor device and apparatus for processing substrate using plasma

A multilayer ceramic capacitor (MLCC) includes a body including first dielectric layers and second dielectric layers, the body including first to sixth surfaces, a second surface, a third surface, a fourth surface, a fifth surface and a sixth surface; first internal electrodes disposed on the first dielectric layers, exposed to the third surface, the fifth surface, and the sixth surface, and spaced apart from the fourth surface by first spaces; second internal electrodes disposed on the second dielectric layers to oppose the first internal electrodes with the first dielectric layers or the second dielectric layers interposed therebetween, exposed to the fourth surface, the fifth surface, and the sixth surface, and spaced apart from the third surface by second spaces; first dielectric patterns disposed in at least a portion of the first spaces, and second dielectric patterns disposed in at least a portion of the second spaces; and lateral insulating layers.

Multilayer ceramic capacitor and board having the same

A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Apparatus and method for processing substrate using plasma

A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

Substrate treating apparatus and substrate treating system comprising the same

A multilayer ceramic capacitor includes: a ceramic body in which dielectric layers and first and second internal electrodes are alternately stacked; and first and second external electrodes formed on an outer surface of the ceramic body and electrically connected to the first and second internal electrodes, respectively. In a microstructure of the dielectric layer, dielectric grains are divided by a dielectric grain size into sections each having an interval of 50 nm, respectively, a fraction of the dielectric grains in each of the sections within a range of 50 nm to 450 nm is within a range of 0.025 to 0.20, and a thickness of the dielectric layer is 0.8 μm or less.

Multilayer ceramic capacitor

A multilayer capacitor includes a body including a plurality of dielectric layers, and a plurality of internal electrodes stacked with one of the dielectric layers interposed therebetween, and external electrodes disposed on external surfaces of the body and connected to the internal electrodes, respectively. The plurality of dielectric layers include a dielectric expressed by empirical formula BaM1TiSnM2O(0.008&#x2264;x&#x2264;0.05, 0.006&#x2264;a&#x2264;0.03, and 0.0006&#x2264;b&#x3c;0.006) in which M1 includes a rare earth element, and M2 includes at least one of Mn or V.

Dielectric and multilayer capacitor including the same

A dielectric material includes a main component represented by (BaCa)(TiZr)O, (BaCa)(TiSn)O, or (BaCa)(TiHf)O(0&#x2264;x&#x2264;1 and 0&#x2264;y&#x2264;0.05) and a subcomponent. When an angle corresponding to a maximum peak is referred to as &#x3b8;and angles corresponding to a full width at half maximum (FWHM) are respectively referred to as &#x3b8;and &#x3b8;(&#x3b8;1&#x3c;&#x3b8;2) in the peaks of (002) and (200) plane of an x-ray diffraction (XRD) pattern using Cu K&#x3b1;1 radiation (wavelength &#x394;=1.5406 &#x212b;), (&#x3b8;&#x2212;&#x3b8;)/(&#x3b8;&#x2212;&#x3b8;) is greater than 0.54 to 1.0 or less.

Dielectric material having improved DC bias dielectric constant and multilayer ceramic electronic component using the same

There is provided a piston of a cartridge for extracting nucleic acids comprising: a cylindrical upper body having a hollow; a lower body having two ports; a control rod module combined to the other end of the upper body to seal the other end and move up and down along the hollow; and a rotation control module that is combined to the shaft of the lower body to transmit a driving force to the lower body.

Piston of nucleic acid extracting cartridge

There is provided a nucleic acid extraction method using a cartridge comprising: (a) a driving part of a nucleic acid extraction device is connected to a control rod module disposed in an inner space of the upper body of a piston and a rotation control module coupled to the lower body of the piston; (b) driving the rotation control module and the control rod module, sequentially sucking sample and reagents from the plurality of chambers separated from each other into an interior space, and discharging the mixture of the interior space into the chamber of the cartridge; and (c) driving the rotation control module and the control rod module to suck the reagent inside the master mix bead chamber of the cartridge into the interior space of the piston upper body and then discharge the mixed reagent to a nucleic acid amplification module.

Method for extracting nucleic acid using cartridge

A method, performed by an electronic device, of predicting an electronic structure of a material includes: receiving input data of a user related to elements constituting the first material; applying the received input data to a trained model for estimating a density of state of the first material; and outputting a first graph indicating the density of state for each energy level of the first material output from the trained model, wherein the trained model is trained to generate the first graph based on pre-input data about a plurality of second materials composed of at least some of the elements constituting the first material and a plurality of second graphs representing the density of state for each energy level of the plurality of second materials.

Method and electronic device for predicting electronic structure of material

The present invention discloses a flow path structure of a cartridge for nucleic acid extraction comprising: a plurality of elongated grooves formed on the surface of the cartridge body; and a shaft hole formed in the center of the body, wherein the plurality of grooves have a starting point formed around the shaft hole and an ending point extending from the starting point toward the outer region of the body.

Channel structure of nucleic acid extracting cartridge

A multilayer ceramic capacitor includes a ceramic body including a dielectric layer, a plurality of first and second internal electrodes disposed inside the ceramic body, exposed to the first and second surfaces, and having ends exposed to the third or fourth surface, and a first side margin portion and a second side margin portion disposed on side portions of the plurality of first and second internal electrodes exposed to the first and second surfaces. A ratio Db/Da satisfies 1.00 to 1.07, inclusive, where 'Db' is a distance, in a stacking direction of the dielectric layer, between both end points of respective edge regions of the first side margin portion and the second side margin portion, and 'Da' is a distance in a central region of the ceramic body in the stacking direction.

Multilayer ceramic capacitor and method of manufacturing the same

A dielectric ceramic composition and a multilayer ceramic electronic component are provided, the dielectric ceramic composition includes a barium titanate base material main component and a subcomponent, a microstructure after sintering includes a first crystal grain including 3 or less domain boundaries and a second crystal grain including 4 or more domain boundaries, and an area ratio of the second crystal grain to the total crystal grains is 20% or less.

Dielectric ceramic composition and multi-layer ceramic electronic component using the same

Growing community of inventors

Suwon-si, South Korea

Dong Hun Kim