Samsung Electronics Co., Ltd.

Dong-hun Kang

Chang-jung Kim

I-hun Song

Young-soo Park

Wan-jun Park

Jae-woong Hyun

Eun-ha Lee

Young-Kwan Cha

Joo-han Chang

Sun-il Kim

Ki-ha Hong

Young-Soo Park

Jae-cheol Lee

Jae-Chul Park

Won-joo Kim

Jeong-Hee Han

Kwang-Hee Kim

Hyuck Lim

Chan-Jin Park

Stefanovich Genrikh

Noe-jung Park

A semiconductor device may include a composite represented by Formula 1 below as an active layer.(GaO).(InO).(ZnO)&#x2003;&#x2003;Formula 1 Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

ZnO based semiconductor devices and methods of manufacturing the same

Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor

Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same

Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

Thin film transistor having a graded metal oxide layer

Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor

A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes. The example method may be directed to identifying a gas, and may include measuring a first current responsive to a first applied voltage during a first mode of operation, comparing the first measured current with a plurality of first index current values to obtain a first comparison result, each of the plurality of first index current values associated with one of a plurality of gases, measuring a second current responsive to a second applied voltage during a second mode of operation, comparing the second measured current with a plurality of second index current values to obtain a second comparison result, each of the plurality of second index current values associated with one of the plurality of gases and determining gas characteristic information based on the first and second comparison results.

Gas sensor and method thereof

A semiconductor device may include a composite represented by Formula 1 below as an active layer.x(GaO)&#xb7;y(InO)&#xb7;z(ZnO)&#x2003;&#x2003;Formula 1wherein, about 0.75&#x2266;x/z&#x2266; about 3.15, and about 0.55&#x2266;y/z&#x2266; about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Nano-elastic memory device and method of manufacturing the same

A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.

Multi-bit nonvolatile memory devices and methods of operating the same

Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.

Growing community of inventors

Yongin-si, South Korea

Dong-hun Kang