Samsung Display Co., Ltd.

Dong Hoon Kwak

Yoon Ho Kang

Jae Hoon Kim

Chang Hee Lee

Katsushi Kishimoto

Ji Yoon Kim

Sung Woong Kim

Yool Guk Kim

Seok Soon Back

Jae Kwon Hwang

Ye Seul Na

Hyang Shik Kong

Dong Uk Kim

Se Hun Kim

Hyo Jin Ko

Young Il Kim

Young Mo Koo

A display device includes an auxiliary electrode disposed on a substrate, a bank layer disposed on the auxiliary electrode, a conductive layer disposed on the auxiliary electrode, the conductive layer including a base portion and protrusions protruded from the base portion, an organic layer disposed on the conductive layer, and a cathode electrode disposed on the organic layer, the cathode electrode being in contact with the protrusions.

Display device and method for manufacturing the same

A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

Light emitting element, manufacturing method for light emitting element, and display device including the same

An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity Ito a peak intensity I(I/I) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity Iand the peak intensity Ibeing further defined.

Organic light emitting device and method of manufacturing the same

A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.

Light-emitting display device

Method of manufacturing light-emitting display device and light-emitting display device manufactured using the method

Growing community of inventors

Hwaseong-si, South Korea

Dong Hoon Kwak