Samsung Electronics Co., Ltd.

Dong-Hoon Ham

Jong-Nam Baek

Sang-Wook Yoo

Joon-Ho Lee

In-Tae Hwang

Hyun-Jin Choi

Ji-hyun In

Joonho Lee

Intae Hwang

Sil-wan Chang

Hyo-Jun 407-1204 Geumhwa Maeul Jugong Apt Kim

An operating method of a memory controller, configured to control a non-volatile memory device that performs a refresh read operation, detects a power on state or power off state of the non-volatile memory device and issues a refresh read command. The non-volatile memory device that receives the refresh read command is controlled to perform, one time, the refresh read operation including a read operation on one of a plurality of word lines with respect to each of the plurality of memory blocks.

Operating method of memory controller controlling non-volatile memory device performing refresh read operation

Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.

Storage device having nonvolatile memory device and write method

A memory system, including a flash memory including multiple memory blocks, and a controller configured to erase each of the memory blocks using multiple steps. The controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata.

Memory system performing multi-step erase operation based on stored metadata

A memory system includes a flash memory including a block having first sub-blocks and second sub-blocks different from each other, the second sub-blocks including free pages only; and a controller configured to erase the flash memory in units of the sub-blocks, and in a garbage collection operation, the controller is configured to copy data of a valid page of the first sub-blocks to at least one of the second sub-blocks.

Memory system

Disclosed is a storage device which includes a nonvolatile memory device including a memory block a program order of which is adjusted regardless of an arrangement of memory cells, and a memory controller that performs address mapping to replace a bad page of the memory block with a normal page of the memory block.

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Hwaseong-si, South Korea

Dong-Hoon Ham