Wonik Ips Co., Ltd.

Dong Ho Ryu

Won Jun Yoon

Young Hoon Park

Byung Chul Cho

Ju Hwan Park

Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode. The substrate treating apparatus for manufacturing a phase-change memory includes a load lock chamber into/from which a plurality of substrates are loaded or unloaded, the load lock chamber being converted between an atmosphere state and a vacuum state, a nitriding chamber in which nitriding is performed on a surface of a substrate on which a bottom electrode is disposed, the nitriding chamber being coupled to one side of a plurality of sides of the vacuum transfer chamber, and a process chamber in which a phase-change layer is deposited on the surface of the substrate on which nitriding is performed in the nitriding process chamber, the process chamber being coupled to one of the plurality of sides of the vacuum transfer chamber.

Apparatus and method for treating a substrate

The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film.

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Pyeongtaek-si, South Korea

Dong Ho Ryu