Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Dong-Hee Kim

Kyo-Ho Moon

Young-Seok Choi

Yong-Soo Cho

Chul-Tae Kim

Kyu-Sun Choi

Myeung-Kyu Lee

Cheol-Se Kim

A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device may have the following advantage. An inferior connection between the drain electrode and the pixel electrode may be prevented by preventing formation of a copper compound on the drain electrode, by performing a back channel etching after patterning a pixel electrode, and by performing a wet strip rather than a dry strip. This may result in a direct contact between copper and ITO, thereby reducing the number of mask processes.

Method of fabricating fringe field switching liquid crystal display device

An array substrate for use in an X-ray sensing device and in an LCD device is fabricated using plasma gas treatment. Especially, an indium-tin-oxide (ITO) transparent conductive metallic layer is plasma-treated by Nplasma, He plasma or Ar plasma, before forming the insulation layer on the ITO transparent conductive metallic layer. Thus, the plasma removes the impurities on a surface of the transparent conductive metallic layer and changes the lattice structure of the surface of the transparent conductive metallic layer, and thus the adhesion between the transparent conductive metallic layer and the insulation layer is improved. The defects caused by a gap or a space between the transparent conductive metallic layer and the insulation layer do not occur.

Method of fabricating an array substrate

A method for re-forming a semiconductor layer of a thin film transistor-liquid crystal display device, including the steps of forming a gate electrode on a substrate, and forming a first gate insulation film on the gate electrode and the substrate; forming a semiconductor layer on the first gate insulation film; etching the semiconductor layer to remove the semiconductor layer if the formed semiconductor layer is defective; etching an upper portion of the first gate insulation film to a certain thickness damaged as the interface is exposed to the air by the etching of the semiconductor layer; forming a second gate insulation film on the remaining first gate insulation film; and forming a semiconductor layer on the second gate insulation film. Since the gate insulation film is partially etched at the upper portion, rather than being completely etched, and re-formed to a planned thickness and then the semiconductor layer is re-formed, the electric characteristics of the display device are prevented from being degraded by the damage to the interface of the gate insulation film.

Method for re-forming semiconductor layer in TFT-LCD

A method of manufacturing a thin film transistor, includes preparing a process chamber having a stage, providing a substrate on the stage of the process chamber, injecting a first mixed gas of NH , N and SiH into the process chamber, forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate, injecting a second mixed gas of H and SiH into the process chamber while removing the first mixed gas in the plasma state, forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas, injecting a third mixed gas of H , SiH and PH into the process chamber while removing the second mixed gas in the plasma state, and forming a doped amorphous silicon film (n a-Si:H) on the silicon nitride film using the second mixed gas.

Growing community of inventors

Gyeongsangbuk-do, South Korea

Dong-Hee Kim