Samsung Electronics Co., Ltd.

Dong-ha Shim

In-sang Song

Kuang-woo Nam

Yun-kwon Park

Young-tack Hong

Seok-chul Yun

Byeoung-ju Ha

Hae-seok Park

Duck-hwan Kim

Sang-Hun Lee

Young-il Kim

Il-Jong Song

Che-Heung Kim

Seog-woo Hong

Soon-cheol Kweon

Hyung-jae Shin

Kuang-Woo Nam

Sun-hee Park

Sang-Wook Kwon

Moon-chul Lee

Jong-seok Kim

Chul-soo Kim

Sang-Chul Sul

Kook-hyun Sunwoo

Seok-Mo Chang

Jea-Shik Shin

Dong-ki Min

Seok-Chul Yun

Byeoung-Ju Ha

Hae-Seok Park

A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

Method of manufacturing a monolithic duplexer

A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

MEMS RF-switch using semiconductor

An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

RF nanoswitch

A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

Monolithic duplexer

An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

Integrated filter including FBAR and saw resonator and fabrication method therefor

A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.

Magnetron

A duplexer having a filter and an isolation part which are integrally formed including a substrate, a transmitter filter integrated on the substrate to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.

Duplexer fabricated with monolithic FBAR and isolation part and a method thereof

A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

Electrostatic RF MEMS switches

An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.

RF power sensor for measuring an RF signal power using capacitance

A MEMS device having flexure elements with non-linear restoring force. The MEMS device has a substrate, support elements formed on the substrate, a moveable element positioned over the substrate by the support elements to move relative substrate, flexure elements for elastically suspending the moveable element on the support elements, a driving element for moving the moveable element, and repulsive elements for increasing the repulsive force of the flexure elements when the flexure elements supporting the moveable element are resiliently deformed during movement of the moveable element. In a MEMS device, the range of controlling the position of a moveable element is extended if flexure elements having non-linear repulsive force control the position of the moveable element. A restoring force is obtained by flexure elements having non-linear repulsive force and the moveable element is prevented from sticking. The MEMS device has much higher reliability than a general MEMS device.

MEMS device having flexures with non-linear restoring force

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Seoul, South Korea

Dong-ha Shim