Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Dong-Gyun Han

Chang-ki Hong

Yong-Sun Ko

Hyo-San Lee

Kun-Tack Lee

Woo-Gwan Shim

Woo-Young Kim

Boong Kim

Jeong-Yong Bae

Hyun-Jung Lee

Se-Jin Park

Hyung-Ho Ko

Won-Ho Jang

Sang-jun Choi

Seung-jun Lee

Jung-Min Oh

Seung-Pil Chung

Ji-Hoon Cha

Young-Jun Kim

Ji-Hoon Jeong

Dae-Hyuk Kang

Ki-Jong Park

Yong-Myung Jun

Woo-gwam Shim

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Substrate processing apparatus and substrate processing system including the same

A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.

Source supplier for a supercritical fluid, substrate processing apparatus having the same

A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.

Method of removing photoresist and method of manufacturing a semiconductor device

A method of manufacturing a nonvolatile semiconductor memory device may include forming a pad oxide layer pattern and a mask pattern on a semiconductor substrate, forming a trench within the semiconductor substrate with the mask pattern functioning as an etching mask, sequentially forming a first device isolation layer and a second device isolation layer that may fill the trench, forming an opening by removing the mask pattern to expose an upper surface of the pad oxide layer pattern and a sidewall of the second device isolation layer, and forming a floating gate forming region having a width wider than the opening by simultaneously removing the pad oxide layer pattern and a sidewall portion of the second device isolation layer exposed by the opening.

Method of manufacturing nonvolatile semiconductor memory device

A nonvolatile memory device and a method for fabricating the nonvolatile memory device are disclosed. The method comprises forming a device isolation pattern comprising a first opening and a second opening wider than the first opening, wherein the first opening is formed in the second opening; and forming a gate insulating layer on a first portion of an active region of the substrate, wherein the first opening exposes the first portion of the active region of the substrate. The method further comprises forming a first conductive layer in the first and second openings and on the gate insulating layer, partially etching the first conductive layer to form a U-shaped floating gate electrode, forming a gate interlayer insulating layer on the U-shaped floating gate electrode, forming a second conductive layer on the gate interlayer insulating layer and the device isolation pattern, and patterning the second conductive layer.

Nonvolatile semiconductor memory device and related method

A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.

Method of cleaning semiconductor substrate

A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls of the device isolation layers are exposed; and selectively etching a surface of the recess channel region using a predetermined cleaning solution to clean the semiconductor substrate where the recess channel region has been formed.

Methods for cleaning a semiconductor substrate having a recess channel region

Growing community of inventors

Yongin-si, South Korea

Dong-Gyun Han