Samsung Electronics Co., Ltd.

Crystalgenomics, Inc.

Dong Gyu Shin

Ho Young Lee

Chul Min Kim

Yong Seok Choi

Cheol Min Kim

Suk Ho Yoon

Joo Young Cheon

Jeong Wook Lee

Hyun Wook Shim

Joong Myung Cho

Seonggu Ro

Do Young Rhee

Seong Joon Cho

Jung Seung Yang

Young Lan Hyun

Bun Joon Kim

A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.

Method of fabricating semiconductor light emitting device

The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Nitride semiconductor light emitting device

A compound which is effective for inhibiting Fab I, and a method for treating a bacterial infection.

Fab I inhibitor and process for preparing same

Growing community of inventors

Seoul, South Korea

Dong Gyu Shin