Lg Siltron Incorporated

Kumoh National Institute of Technology Industry-Academic Cooperation Foundation

Dong-Gun Lee

Sung-Jin An

Seok-Han Kim

According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

Compound semiconductor devices and methods for fabricating the same

Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

Growing community of inventors

Gyeongbuk, South Korea

Dong-Gun Lee