Samsung Electronics Co., Ltd.

Fine Semitech Corp.

Dong-gun Lee

Seong-sue Kim

Sang-hyun Kim

Dong-Wan Kim

Young-jo Tak

Joo-sung Kim

Tae-Geun Kim

Jong-uk Seo

Byung-Gook Kim

Hwan-seok Seo

In-Sung Kim

Rae-won Yi

Chang-min Park

Yong-il Kim

Seong-woon Choi

Kyung-wook Hwang

Jae-Hyuck Choi

Chan-Uk Jeon

Dong-Hoon Chung

Hee-bom Kim

Jung-sub Kim

Sung-min Huh

Jin-sub Lee

Su-Young Lee

Mun-Ja Kim

Myoung-soo Lee

Byoung-Sup Ahn

Jin-sik Jung

Chalykh Roman

Min-kyung Lee

Seong-Yong Moon

Hak-Seung Han

Jong-Ju Park

Min-gyeong Gwon

Sang-Yong Yu

Ji-hoon Na

Young-su Sung

Byoung-Hun Park

Eok-Bong Kim

A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Light emitting device package with reliably formed switching unit

Light emitting device package

A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.

Light-emitting device package, display device including the same, and method of manufacturing the same

A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.

Semiconductor light emitting device

An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.

Apparatus for measuring mask error and method therefor

A method of inspecting a surface includes loading an inspection object on a stage of a multibeam inspection device configured to generate a beam array, and scanning a plurality of inspection areas of the inspection object at a same time with the beam array, wherein one of the first inspection areas is smaller than an area formed by a quadrangle connecting respective centers of corresponding four adjacent beams of the beam array, and an adjacent area of the one first inspection area is not scanned with the beam array.

Method of inspecting surface and method of inspecting photomask using the same

An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Exposure apparatus and method of manufacturing semiconductor device

A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.

Light-emitting device packages and methods of manufacturing the same

A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.

Methods of manufacturing photomasks, methods of forming photoresist patterns and methods of manufacturing semiconductor devices

A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

Reflective extreme ultraviolet mask

Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device

A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

Method of manufacturing reflective extreme ultraviolet mask

Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.

Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit

According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.

Reflective extreme ultraviolet mask and method of forming a pattern using the same

Growing community of inventors

Hwaseong-si, South Korea

Dong-gun Lee