Sungkyunkwan University

Global Frontier Center for Multiscale Energy Systems

Global Frontier Center for Multiscale Energy

Research & Business Foundation Sungyunkwan

Dong Geon Lee

Hyun Suk Jung

So Yeon Park

Byeong Jo Kim

Won Bin Kim

Min Hee Kim

Sang Myeong Lee

Young Un Jin

Jae Myeong Lee

Dong Hoe Kim

Jae Bum Jeon

Gi Joo Bang

Seung Lee Kwon

Ji Hyun Baek

Miyeon Baek

The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Resistive random access memory device comprising metal halide and method for preparing the same

The present invention relates to a method which can effectively remove perovskite light absorbers, hole transport layers, metal electrodes, and the like by immersing a waste perovskite-based photoelectric conversion element module in a cleaning solution under predetermined conditions. The present invention can recover a substrate from the waste module and manufacture a photoelectric conversion element having a photoelectric conversion efficiency level comparable to the initially high level again, using the same.

Method for recycling perovskite-based photoelectric conversion element

The present disclosure provides a method for producing beta-tricalcium phosphate spherical particles containing magnetic ions. The method includes mixing acidic amino acid monomers, metal salt of magnetic ions and metal salt of calcium ions in de-ionized water to form a first solution; dissolve phosphate in de-ionized water to form a second solution; mixing the first and second solutions to form a third solution; and performing hydrothermal synthesis of the third solution.

Magnetic beta-tricalcium phosphate spherical particles and method for producing the same

The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Resistance random access memory device and preparing method thereof

Growing community of inventors

Seoul, South Korea

Dong Geon Lee