China Resources Microelectronics (Chongqing) Co., Ltd.

Csmc Technologies Fab2 Co., Ltd.

Dong Fang

Zheng Bian

Kui Xiao

Jinjie Hu

The present application relates to a semiconductor device, comprising a substrate, with a body region being formed on the substrate, and a well region being formed in the body region; and further comprising trenches penetrating through the well region and the body region and extending to the substrate, wherein a first polysilicon body and a second polysilicon body, which are isolated from each other, are respectively formed at the bottom and the top of each trench to form a split gate structure, the trenches are filled with an inter-layer dielectric layer, a conductive plug penetrating through the inter-layer dielectric layer and extending into the first polysilicon body is formed in each trench, the conductive plug is isolated from the second polysilicon body by means of the inter-layer dielectric layer, the conductive plug is connected to a source electrode, and the second polysilicon body is connected to a gate electrode.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device comprises a drift region (), a body region (), a first doped region () and a second doped region ()); a first trench penetrates the first doped region (), the body region () extends into the drift region (); an extension region () having an opposite conductivity type to the drift region () and surrounding the bottom wall of the first trench; where the first trench is filled with a first conductive structure () and a second conductive structure (); a dielectric layer () formed between the second conductive structure () and the inner wall of the first trench, as well as between the first conductive structure () and the inner wall of the first trench; a second trench penetrating the first doped region () and the body region (), and a dielectric layer () located between the third conductive structure () and the second trench ().

Semiconductor device and preparation method thereof

A preparation method for semiconductor device, comprising: forming a body region () in the drift region (), forming a first doped region () and a second doped region () in the body region (); forming a first trench () penetrating the first doped region () and the body region () and extending to the drift region (); forming an extension region () with a conductivity type opposite to that of the drift region () and surrounding the bottom wall of the first trench (); filling the first trench () with a dielectric layer () formed on the sidewall of the trench, a first conductive structure () located at the bottom of the trench and a second conductive structure () located at the top of the trench; forming a second trench () penetrating the body region () and extending into the drift region (); filling the second trench () with a third conductive structure () and a dielectric layer () formed on the inner wall of the trench. The second conductive structure () is electrically connected with the gate, and the first doped region (), the second doped region (), and the third conductive structure () are electrically connected with the first electrode ().

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Jiangsu, China

Dong Fang