Samsung Electronics Co., Ltd.

Dong-Chul Ihm

Ji-Hye Lee

Kwang-Hoon Kim

Do-yun Kim

Sung-Bo Shim

Soo-Bok Chin

Hyung-Seop Kim

Byoung-Ho Lee

Jong-Cheon Sun

Woo-Young Cheon

Hee-Won Sunwoo

Ki-Wook Song

A method of predicting a shape of a semiconductor device includes implementing a modeled semiconductor shape with respect to a designed semiconductor layout, extracting a plurality of samples by independently linearly combining process variables with respect to the modeled semiconductor shape; generating virtual spectrums with respect to ones of the extracted plurality of samples through optical analysis, indexing the virtual spectrums to produce indexed virtual spectrums, generating a shape prediction model by using the indexed virtual spectrums as an input and the modeled semiconductor shape as an output, and indexing a spectrum measured from a manufactured semiconductor device and inputting the spectrum to the shape prediction model to predict a shape of the manufactured semiconductor device.

Method of predicting shape of semiconductor device

A method for detecting defects includes irradiating at least one electron beam into a first region of a substrate, irradiating at least one electron beam into a second region electrically connected to the first region, and detecting secondary electrons emitted from the second region. The electron beam irradiated into the first region may be the same or different from the electron beam irradiated into the second region. Alternatively, different beams may be simultaneously irradiated into the first and second regions. An image generated based on the secondary electrons shows a defect in the substrate as a region having a grayscale difference with other regions in the image.

Method for detecting defect of substrate

Growing community of inventors

Suwon-si, South Korea

Dong-Chul Ihm