Industry-University Cooperation Foundation Hanyang University

Korea Institute of Science and Technology

Top Engineering Company

Dong Chul Choo

Tae Whan Kim

Young Ju Park

Eun Kyu Kim

Hyun Sung Bang

Seung Oun Kang

Jae Hwan Shim

Disclosed is a high-power sliding-mode triboelectric generator including a substrate; a positive electrode formed on the substrate; a positively charged body provided on the positive electrode and formed to be tilted at a predetermined angle from the substrate; a negatively charged body located to be opposite to the positively charged body and formed to be tilted at the same angle as in the positively charged body; a negative electrode provided on the negatively charged body and configured to support the negatively charged body; and at least one spacer formed between the positively charged body and the negatively charged body, is formed of an elastic body, and configured to maintain an interval between the positively charged body and the negatively charged body.

High-power sliding-mode triboelectric generator having tilted-face structure and method of manufacturing the same

Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.

Organic light emitting device

Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.

Fabrication method of nanocrystals using a focused-ion beam

Growing community of inventors

Seoul, South Korea

Dong Chul Choo