Samsung Electronics Co., Ltd.

Yonsei University

Dong Chan Suh

Seung Hun Lee

Dong Woo Kim

Woo Bin Song

Sun Jung Kim

Geum Jong Bae

Seung Min Song

Jung Gil Yang

Kwan Heum Lee

Dongsuk Shin

Dong Il Bae

Sangmoon Lee

Gyeom Kim

Woo Seok Park

Yihwan Kim

Seung Ryul Lee

Su Jin Jung

Cho Eun Lee

Byeong Chan Lee

Nam Kyu Kim

Ji Eon Yoon

Tae Jin Park

Jong Min Lee

Jinbum Kim

Sujin Jung

Seokhoon Kim

Seok Hoon Kim

Nam-Kyu Kim

Gi Gwan Park

Choeun Lee

Byeongchan Lee

Jin Bum Kim

Dong Suk Shin

Moon Seung Yang

Jeong Ho Yoo

Yong Suk Tak

Hong Bum Park

Kwang Sik Jeong

Poren Tang

Mann-Ho Cho

Ha Kyu Seong

Jieon Yoon

Mi Seon Park

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Semiconductor device including multi-thickness nanowires

A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

Semiconductor device

A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.

Semiconductor devices and manufacturing methods thereof

Semiconductor device including nanowires having multi-thickness regions

Semiconductor device having multi-thickness nanowire

A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model. Such non-destructive measurements may be used to determine manufacturing process parameters corresponding to ideal doping profiles and used to manufacture semiconductor devices implementing such manufacturing process parameters.

Method of manufacturing a semiconductor device using the same

Semiconductor device and method for manufacturing the same

Semiconductor device having a multi-thickness nanowire

Semiconductor device having a varying thickness nanowire channel and method for fabricating the same

A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a channel pattern on a substrate, the channel pattern extending in a first direction; a gate pattern on the substrate, the gate pattern extending in a second direction crossing the first direction and surrounding the channel pattern; and an interface layer between the channel pattern and the gate pattern, the interface layer being formed on at least one surface of an upper surface and a lower surface of the channel pattern.

Semiconductor device including channel pattern and manufacturing method thereof

A method of manufacturing semiconductor device includes forming a plurality of sacrificial layers and a plurality of semiconductor layers repeatedly and alternately stacked on a substrate, partially removing the sacrificial layers, forming spacers in removed regions of the sacrificial layers, and replacing remaining portions of the sacrificial layers with a gate electrode. Each of the sacrificial layers includes first portions disposed adjacent to the plurality of semiconductor layers and a second portions disposed between the first portions. The second portion having a different composition from the first portions.

Semiconductor device and method of manufacturing the same

A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first wire pattern is on a substrate and isolated from the substrate. The gate electrode surrounds and intersects the first wire pattern. The semiconductor pattern is on both sides of the first wire pattern, and the semiconductor pattern includes a portion which overlaps the first wire pattern. The gate insulating layer is disposed between the gate electrode and the first wire pattern, and the gate insulating layer surrounds the first wire pattern. The first spacer is between the first wire pattern and the substrate, and the first spacer is between the gate insulating layer and the semiconductor pattern.

Semiconductor device and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Dong Chan Suh