General Electric Company

Lsi Corporation

Lsi Logic Corporation

Donald Thomas McGrath

Scott C Savage

Kenneth G Richardson

Robert D Waldron

Daniel David Harrison

Paul Andrew Frank

Daniel Arthur Staver

Robert Gideon Wodnicki

Walter Whipple

Mark Edward Dausch

Joseph E Krisciunas

Jerome Johnson Tiemann

Vivek Venugopal Badami

Naresh Kesavan Rao

Steven L Garverick

John Erik Hershey

David Michael Hoffman

Kenneth Brakeley Welles

Charles D Greskovich

Dale M Brown

Robert Joseph Lyons

Robert J Dunki-Jacobs

Richard Louis Frey

Naveen Stephan Chandra

Danny C Vogel

Ricky F Bitting

Michael Robert Hopple

Gregory Scott Winn

Chung-Yih Ho

Shobhana Mani

Oliver Richard Astley

Scott Allen Peterson

Terry Clifford Cooper

Philippe L Jacob

Barbara D Molnar

A comparator receives first differentials, compares the differentials to a positive offset, and sets bits dependent upon whether the differentials are greater than the positive offset. The comparator receives second differentials, compares the differentials to a negative offset, and sets bits dependent upon whether the differentials are greater than the negative offset. The comparator compares the first bits to the second bits, and sets a mask dependent upon whether the first bits and the second bits are identical. The comparator receives subsequent differentials, compares the differentials to a zero offset, and sets bits dependent upon whether the differentials are greater than the zero offset. The subsequent bits are compared to the mask and corrected.

Identification circuit with repeatable output code

A platform application specific integrated circuit (ASIC) including a base layer. The base layer generally comprises a predefined input/output (I/O) region and a predefined core region. The predefined input/output (I/O) region may comprise a plurality of pre-diffused regions disposed in the platform ASIC. The predefined core region may comprise one or more metal layers defining a plurality of power regions formed according to a custom design created after the base layer is fabricated. The base layer can be customized by depositing one or more metal layers.

Isolated power domain core regions in platform ASICs

A method for producing a chip is disclosed. A first step of the method may involve fabricating the chip only up to and including a first metal layer during a first manufacturing phase such that an input/output (I/O) region of the chip has a plurality of slots, where each of the slots has a plurality of first transistors. A second step of the method may involve designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the first transistors to form a plurality of mixed-signal building block functions. A third step of the method may involve fabricating the chip to add the upper metal layers during a second manufacturing phase.

Use of configurable mixed-signal building block functions to accomplish custom functions

An apparatus comprising an integrated circuit having (i) a number of regions each pre-diffused and configured to be metal-programmed and (ii) a plurality of pins configured to connect the integrated circuit to a socket. A logic portion may be implemented on the integrated circuit (i) configured to implement integrated circuit operations and (ii) having one or more I/O connections and one or more supply connections. A first group of the pre-diffused regions are metal-programmed and coupled to said I/O connections. A second group of the pre-diffused regions are metal-programmed and coupled to the supply connections.

Distributed relocatable voltage regulator

An apparatus including a base layer of a platform application specific integrated circuit (ASIC), a mixed-signal function and a built-in self test (BIST) function. The base layer of the platform ASIC generally includes a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions is generally configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a first number of the plurality of pre-diffused regions. The BIST function may be formed with a metal mask set placed over a second number of the plurality of pre-diffused regions. The BIST function may be configured to test the mixed-signal function and present a digital signal indicating an operating condition of the mixed-signal function.

Relocatable built-in self test (BIST) elements for relocatable mixed-signal elements

A method for producing a chip is disclosed. A first step of the method may include fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step generally involves designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form (i) a mixed-signal module and (ii) a digital module, the mixed signal module generating at least one analog signal and at least one digital signal. In a third step, the method may include fabricating the chip to add the upper metal layers.

Mixed-signal functions using R-cells

An apparatus that may include a base layer of a platform application specific integrated circuit (ASIC) and a mixed-signal function. The base layer of the platform application specific integrated circuit (ASIC) generally comprises a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions may be configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a number of the plurality of pre-diffused regions.

Relocatable mixed-signal functions

A method for interconnecting sub-functions of metal-mask programmable functions that includes the steps of (A) forming a base layer of a platform application specific integrated circuit (ASIC) comprising a plurality of pre-diffused regions disposed around a periphery of the platform ASIC, (B) forming two or more sub-functions of a function with a metal mask set placed over a number of the plurality of pre-diffused regions of the platform application specific integrated circuit and (C) configuring one or more connection points in each of the two or more sub-functions such that interconnections between the two or more sub-functions are tool routable in a single layer. Each of the pre-diffused regions is configured to be metal-programmable.

Method of interconnect for multi-slot metal-mask programmable relocatable function placed in an I/O region

A method for producing a chip is disclosed. A first step of the method may involve first fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step of the method may be to design a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form an electrostatic discharge clamp at a power domain crossing. A third step may include second fabricating the chip to add the upper metal layers.

R-cells containing CDM clamps

An apparatus comprising an integrated circuit and a logic portion. The integrated circuit may have a plurality of regions each (i) pre-diffused and configured to be metal-programmed and (ii) configured to connect the integrated circuit to a socket. The logic portion may be implemented on the integrated circuit. The plurality of metal programmable regions are each (i) independently programmable and (ii) located in one of said pre-diffused regions. Each of the metal programmable regions comprises (a) a regulator section configured to generate an operating voltage from a common supply voltage, (b) a logic section configured to implement integrated circuit functions and operate at the operating voltage, and (c) a level shifter configured to shift the operating voltage to an external voltage level.

Configurable I/Os for multi-chip modules

A multi-channel analog to digital conversion circuit and methods thereon are provided. The multi-channel analog to digital conversion cirucit comprises a plurality of linearized channels wherein each channel comprises a multi-stage pipelined charge-to-digital converter and an integrating capacitor within each stage of the multi-stage converter wherein analog residue is processed by subsequent analog to digital converter stages. Each stage of respective linearized channels is configured for calculating gain and offset for each stage in the channel and such gain and offset is used in subsequent integration periods.

Very linear wide-range pipelined charge-to-digital converter

Circuitry and a method for testing oversampled Analog to Digital converters. The voltage reference is used as the input signal, thus eliminating the need for a special signal generator. The dynamic signal is obtained by not sampling the voltage reference on every sample. Instead, a state machine is used to gate the sampling of the voltage reference, which in turn causes a varying amount of change to be injected into the first integrator in the converter. As a result, the state machine effectively simulates many input levels.

Low circuit overhead built in self test for oversampled ADC's

In one aspect, the present invention provides a method for amplifying a signal including generating an input signal and amplifying the input signal utilizing a chopper-stabilized, silicon carbide NMOS depletion mode operational amplifier to produce an amplified output signal.

Methods and apparatus for amplification in high temperature environments

A radiation detector includes: a scintillator which produces UV photons in response to receiving radiation from a radiation producing source; and, a wide bandgap semiconductor device sensitive to the UV photons produced by the scintillator. The semiconductor device produces an electric signal as a function of the amount of UV photons incident thereon. Preferably, the electric signal is then measure, recorded and/or otherwise analyzed.

SiC photodiode detectors for radiation detection applications

A detector device used in an imaging system includes a photodiode array that is positioned to detect radiation transmitted by the imaging system. A switch array is connected to the photodiode array. The switch array has an output and comprises switch banks having switches. A control logic circuit is connected to the switch array and controls the state of the switches in the switch banks based on a predefined switching configuration. The control logic circuit also includes a memory device programmed to store the predefined switching configurations. The predefined switching configurations represent respective operational modes of the imaging system wherein each respective operational mode has a respective predetermined detector slice thickness.

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Fort Collins, CO, United States of America

Donald Thomas McGrath