Agere Systems Inc.

General Electric Company

Donald Stephen Bitting

Sailesh Mansinh Merchant

Mark Adam Bachman

Seung Hyuk Kang

Sailesh Chittipeddi

Raymond Albert Fillion

Taeho Kook

Daniel Patrick Chesire

Daniel Lee Abraham

The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening.

Solder bump structure for flip chip semiconductor devices and method of manufacturing therefore

An electronic component includes a base insulative layer having a first surface and a second surface; at least one electronic device having a first surface and a second surface, wherein the electronic device is secured to the base insulative layer; at least one I/O contact located on the first surface of the electronic device; and a frame panel defining an aperture, wherein the electronic device is disposed within the aperture, and the frame panel is a multi-functional structure having a first region comprising a first material, wherein a surface of the first region secures to the base insulative layer; and a second region comprising a second material, wherein the first material and the second material differ from each other and have differing adhesability to the base insulative layer.

Interconnect structure including hybrid frame panel

Solder bump structure for flip chip semiconductor devices and method of manufacture therefore

A solder bump structure and an under bump metallurgical structure. An upper surface of a semiconductor substrate comprises a first conductive pad () disposed thereon. A passivation layer () overlies the upper surface. A second conductive pad () is disposed in an opening () in the passivation layer and in contact with the first conductive pad. The under bump metallurgical structure () encapsulates the second conductive pad, covering an upper surface and sidewalls surfaces of the second conductive pad, protecting both the first and the second conductive pads from environmental and processing effects. According to the present invention, the conventional second passivation layer is not required. Methods for forming the various structures are also presented.

Structure and method for fabricating flip chip devices

Growing community of inventors

Sinking Spring, PA, United States of America

Donald Stephen Bitting