General Electric Company

Boe Technology Group Co., Ltd.

Donald Seton Farquhar

Michael Scott Herzog

Stefan Rakuff

Anil Raj Duggal

Christian Maria Anton Heller

Bruce Richard Roberts

Charles S Korman

Clifford Bueno

Neil A Johnson

Ahmet Gun Erlat

Kevin Payne

Jeffrey Michael Youmans

George Gibson Chalmers

Ganesh Krishnamoorthy

Linda Ann Boyd

Antonio Luigi Ibba

Tamas Gschwendtner

Ali Esat Iz

Charles Steven Korman

Kevin C Payne

Neil Anthony Johnson

A radiography imaging system for generating images of a pipe assembly includes a radiation source for emitting rays. The pipe assembly includes at least one of a pipe, tubing, and a weld. The radiation source includes a radioactive isotope having an activity level within a range between about 1 Curie and about 40 Curies. The radiation source is positioned adjacent a portion of the pipe assembly. A detector is positioned opposite the radiation source. The portion of the pipe assembly is positioned between the radiation source and the detector such that the rays interact with the portion of the pipe assembly and strike the detector. The detector includes an imaging plate that is activated by illumination with the rays with an exposure within a range between about 0.5 Curie-minute and about 5 Curie-minutes of radiation. The imaging plate has a thickness within a range between about 5 mm and about 15 mm. The detector further includes an imaging unit for generating images based on information from the imaging plate. The imaging unit has a pixel pitch that is within a range between about 25 microns and about 100 microns.

System for radiography imaging and method of operating such system

Embodiments of a tri-stable flexure mechanism are described where a resilient component is present that serves as both a structural component in the kinematic chain of the mechanism and as energy storing component of the mechanism. The resilient component maintains a movable arm and an input link in either a first stable state or a second stable state when the ends of the resilient component are held in place so that the resilient component has a state of high elastic strain energy. In a third stable state, where the resilient component is in a relaxed state of lower elastic strain energy, the mechanism may be in a tripped state distinct from the closed and open states.

Tri-stable flexure mechanism

An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Optoelectronic device package, array and method of fabrication

An article of manufacture comprises a thin film solid state lighting device, such as an organic light emitting diode (OLED) device, having a planar light emitting side and an opposite planar mounting side and including electrodes disposed on the planar mounting side of the thin film solid state lighting device, the electrodes including a magnetic material configured to conductively convey electrical drive current to drive the thin film solid state lighting device to emit light at the planar light emitting principal side. The article of manufacture may further comprise a fixture having a planar surface with magnets arranged to mate with the electrodes to magnetically secure the thin film solid state lighting device with the fixture and to concurrently form electrically conductive paths including the magnetic material of the electrodes configured to conductively convey electrical drive current. Thus this magnetic connection provides both mechanical support and electrical conduction path.

OLED lighting devices including electrodes with magnetic material

An encapsulation structure comprises a first barrier layer, and an electroluminescence device configured to be coupled to the first barrier layer and comprising a substrate and an electroluminescence element both defining a lateral side. The electroluminescence element comprises a first electrode disposed on the substrate, a second electrode, and an organic light-emitting layer disposed between the first and second electrodes. Further, the encapsulation structure comprises a second barrier layer configured to be coupled to the electroluminescence device, and an adhesive configured to locate between and connect the first and second barrier layers, and at least to be coupled to the lateral side of the electroluminescence device to seal the electroluminescence device between the first and second barrier layers. An encapsulation method is also presented.

Encapsulation structures of organic electroluminescence devices

An optoelectonice device array includes a plurality of packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package overlaps at least one adjacent package, and may be hermetically sealed.

Optoelectronic device array

A photovoltaic roofing system and a method of installing the photovoltaic ridge cap structure have been provided. The photovoltaic roofing system includes a ridge cap adapted to cover a ridge of a roof structure. The system also includes at least one photovoltaic cell disposed within the ridge cap. The method of installing a photovoltaic ridge cap structure includes mounting the ridge cap over multiple photovoltaic cells along a ridge of a roof structure. The method further includes routing electrical leads from each photovoltaic cell through one or more openings along the ridge of the roof structure.

Photovoltaic roof ridge cap and installation method

An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.

Method of manufacturing monolithic parallel interconnect structure

An encapsulated optoelectronic device includes: a first barrier layer; an electroluminescence device coupled to the first barrier layer, and comprising a substrate and an electroluminescence element both defining a lateral side, and the electroluminescence element comprising a first electrode disposed on the substrate, a second electrode, and an optoelectronically active layer between the first and second electrodes; a second barrier layer coupled to the electroluminescence device; and an adhesive located between and connecting the first and second barrier layers, and at least coupled to the lateral side of the electroluminescence device to seal the electroluminescence device; a first conductive area electrically coupled to the first electrode and electrically insulated from the second electrode and a second conductive area; the second conductive area electrically coupled to the second electrode and electrically insulated from the first electrode and the first conductive area. A method for making the encapsulated optoelectronic device is presented.

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Niskayuna, NY, United States of America

Donald Seton Farquhar