Intel Corporation

Other

Leland Stanford Junior University

California Institute of Technology

Donald S Gardner

Gerhard Schrom

Tanay Karnik

Peter Hazucha

Fabrice Paillet

Charles W Holzwarth

Zhaohui Chen

Cary L Pint

Wei C Jin

Yang Liu

John L Gustafson

Vivek K De

Bum Ki Moon

Shekhar Yeshwant Borkar

Priyanka Pande

Siva G Narendra

Eric Cabot Hannah

Jianping Xu

Sung Tae Moon

Edward Allyn Burton

Scott Bruce Clendenning

Nitin Y Borkar

Howard A Wilson

Trang T Nguyen

Nicolas Cirigliano

Shanthi Murali

Larry E Mosley

Quat T Vu

Tomm Aldridge

Sujit Sharan

Stefan Rusu

Ravindranath Vithal Mahajan

Kaladhar Radhakrishnan

David B Fraser

Xiao-Chun Mu

Troy W Barbee, Jr

Pavan Kumar

Krishna Chandra Saraswat

Thomas N Marieb

Rong Chen

Shamala Chickamenahalli

Ankur Mohan Crawford

James W Tschantz

Harry A Atwater

James W Tschanz

Seong-Youp Suh

Hossein Alavi

Volkan Kursun

Paul McCloskey

Saibal Roy

Terence O'Donnell

Michael C Graf

Brice Jamieson

Tanay Kamik

Srinivasan Sivaram

Chunlei Wang

Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous disks comprising a porous material, the porous disks having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material encapsulating the porous disks; where the structural material provides structural stability to the electrode during use.

Particle-based silicon electrodes for energy storage devices

Integrated passive components in a stacked integrated circuit package are described. In one embodiment an apparatus has a substrate, a first die coupled to the substrate over the substrate, the first die including a power supply circuit coupled to the substrate to receive power, a second die having a processing core and coupled to the first die over the first die, the first die being coupled to the power supply circuit to power the processing core, a via through the first die, and a passive device formed in the via of the first die and coupled to the power supply circuit.

Passive components in vias in a stacked integrated circuit package

Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.

Method of increasing an energy density and an achievable power output of an energy storage device

Embodiments are generally directed to an integrated inductor with adjustable coupling. In some embodiments, an integrated inductor includes a first conductor and a second conductor; a first strip of magnetic material film below the first conductor and the second conductor; and a second strip of magnetic material film above the first conductor and the second conductor, wherein at least one of the first strip of magnetic material and the second strip of magnetic material includes a partial slot to partially separate a first section of the strip of magnetic material and a second section of the strip of magnetic material.

Integrated inductor with adjustable coupling

Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.

Integrated passive devices on chip

Embodiments are generally directed to hybrid magnetic material structures for electronic devices and circuits. An embodiment of an inductor includes a first layer of magnetic film material applied on a substrate, one or more conductors placed on the first layer of magnetic film material, and a second layer of magnetic particles, wherein the magnetic particles are suspended in an insulating medium.

Hybrid magnetic material structures for electronic devices and circuits

Integrated passive component in a stacked integrated circuit package are described. In one embodiment an apparatus has a substrate, a first die coupled to the substrate over the substrate, the first die molding a power supply circuit coupled to the substrate to receive power, a second die having a processing core and coupled to the first die over the first die, the first die being coupled to the power supply circuit to power the processing core, a via through the first die, and a passive device formed in the via of the first die and coupled to the power supply circuit.

In one embodiment of the invention, a low frequency converter is described that includes a first electrochemical capacitor to charge to an input voltage and a second electrochemical capacitor that is coupled to the first electrochemical capacitor. The second electrochemical capacitor is associated with an output voltage of the low frequency converter. Each electrochemical capacitor may have a capacitance of at least one millifarad (mF) and a switching frequency that is less than one kilohertz.

Low frequency converters having electrochemical capacitors

Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.

Fabrication of porous silicon electrochemical capacitors

Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.

Faradaic energy storage device structures and associated techniques and configurations

Embodiments of a variable inductor and a communication device are generally described herein. The variable inductor may comprise a signal wire and a control wire to receive a direct current (DC) control current. The variable inductor may further comprise a magnetic material integrated with the signal wire and the control wire. When a DC control current applied to the control wires takes a first current value, an inductance between an input node and an output node on the signal wire may take a first inductance value. When the DC control current takes a second current value, the inductance between the input node and the output node may take a second inductance value.

Variable inductor and wireless communication device including variable device for conversion of a baseband signal to a radio frequency (RF) range

An energy storage device includes a middle section () including a plurality of double-sided porous structures (), each of which contain multiple channels () in two opposing surfaces () thereof, an upper section () comprising a single-sided porous structure () containing multiple channels () in a surface () thereof, and a lower section () including a single-sided porous structure () containing multiple channels () in a surface () thereof.

Energy storage device, method of manufacturing same, and mobile electronic device containing same

Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous silicon having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material deposited within the channels; wherein the structural material provides structural stability to the electrode during use.

Robust porous electrodes for energy storage devices

An energy storage device includes an electrode made from an active material in which a plurality of channels have been etched. The channels are coated with an electrically functional substance selected from a conductor and an electrolyte.

Three dimensional energy storage device, method of manufacturing same, and mobile electronic device containing same

Growing community of inventors

Mountain View, CA, United States of America

Donald S Gardner