Fairchild Semiconductor Corporation

Donald Roy

Yuri V Sokolov

Tyler Hook

Densen B Cao

Dean E Probst

An apparatus for bonding substrates includes a base member having a top surface and a recessed region which is configured for receiving at least a first substrate. The apparatus also has a plurality of support members disposed over the top surface for supporting a second substrate peripherally over the first substrate. Each support member is configured to vary a separation between the first substrate and the second substrate. Moreover, a pressure bar is configured to cause a center portion of the second substrate to contact the first substrate while the support members maintain peripheral separation between the first substrate and the second substrate. In operation, a bonded region between the first and the second substrates is expanded radially from the center portion when the support members are positioned to reduce the separation between the first and the second substrates.

Method and apparatus for bonded substrates

A method for forming bonded substrates includes providing a plurality of substrates, each of which having a top surface. A characteristic length for each of the plurality of substrates is determined by: determining a topographical profile of the top surface of the substrate from an interior portion to an edge portion along a radial direction, determining a highest point of the profile, and defining the characteristic length as a distance from the highest point to the edge portion. A first substrate and a second substrate are selected where at least one of the first or the second substrates has a characteristic length shorter than a predetermined length. The first substrate and the second substrate are brought into contact and form bonded substrates, with the top surface of the first substrate facing the top surface of the second substrate.

A method of making a trench MOSFET structure having upper trench corner protection, the method not requiring trench corner rounding or sacrificial oxide/strip steps. The trench MOSFET structure fabricated according to the method of the present invention exhibits higher oxide breakdown voltage and lower gate-to-source capacitance.

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West Jordan, UT, United States of America

Donald Roy