Other

Harris Corporation

Donald Ray Preslar

Raymond L Giordano

An EPROM cell comprises an MOS device including a floating gate electrode overlying, and ohmically insulated from, the channel region of the MOS device, and a separate diode including a p-n junction having a substrate surface intercept. A floating gate electrode overlies the diode p-n junction intercept and is ohmically isolated therefrom by an intervening insulating layer. Writing of data into the floating gate electrode of the MOS device is achieved by causing a voltage breakdown across the diode p-n junction and the flow of high energy electrons across the junction. A voltage is simultaneously applied to the diode gate electrode thereby attracting some of the high energy electrons through the overlying insulating layer into the diode floating gate electrode. The diode gate electrode is ohmically connected to the MOS floating gate electrode on which some of the electrons are stored for affecting the turn-on, turn-off characteristics of the MOS device.

Electrically programmable memory cell

A circuit in which the source-to-drain conduction path of a power switching transistor is connected in series with an inductive load between first and second power terminals includes a voltage transient clamping transistor having its source-to-drain conduction path connected between the drain and gate of the switching transistor. In response to a turn-off signal applied to the gate of the switching transistor, a transient voltage is generated at the drain of the switching transistor. When the transient voltage at the drain of the power switching transistor exceeds a predetermined value, the clamping transistor is turned-on. The conduction of the clamping transistor limits the voltage rise at the drain of the switching transistor and tends to maintain the switching transistor conducting temporarily to aid in the discharge of the energy stored in the inductive load. A unidirectional conducting element connected in series with the clamping transistor ensures that only current of a polarity to discharge the inductive load flows through the clamping transistor.

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Three Bridges, NJ, United States of America

Donald Ray Preslar